Memory with a silicide charge trapping layer
A semiconductor device according to the present embodiment includes a semiconductor substrate. A first insulating film is provided on the semiconductor substrate. A charge trap layer is provided on the first insulating film and the charge trap layer includes a silicide layer made of a metal silicide. A second insulating film is provided on the charge trap layer. A control gate electrode is provided on the second insulating film.
1. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film on the semiconductor substrate;
a charge trap layer on the first insulating film, the charge trap layer including a silicide layer made of a metal silicide and including a first semiconductor layer between the first insulating film and the silicide layer;
a second insulating film on the charge trap layer;
a control gate electrode on the second insulating film; and
a nitride film between the first semiconductor layer and the silicide layer.
2. The device of claim 1 further comprising:
a second semiconductor layer between the nitride film and the silicide layer.
3. The device of claim 2 , wherein
the first and second semiconductor layers are made of polysilicon, and
the nitride film is made of a silicon nitride film.
4. The device of claim 2 , wherein
the silicide layer is made of any one of Ru 2 Si 3 , Ir 2 Si 3 and Rh 2 Si 3 ,
the first and second semiconductor layers are made of polysilicon, and
the nitride film is made of a silicon nitride film.
5. The device of claim 1 , wherein nitrogen is added to the silicide layer.
6. The device of claim 1 , wherein the silicide layer is made of any one of Ru 2 Si 3 , Ir 2 Si 3 , and Rh 2 Si 3 .
7. The device of claim 1 , wherein the second insulating film is made of a high-dielectric material having a higher relative permittivity than that of a silicon dioxide film.