DETERMINING A CONFIGURATION PARAMETER USING A SOFT READ COMMAND
Apparatuses, methods, and computer program products are disclosed for determining read thresholds for a non-volatile memory device. A method includes obtaining soft read data for a storage cell of a non-volatile storage medium. A method includes determining a read voltage threshold or other configuration parameter for a storage cell based on soft read data. A method includes using a determined read voltage threshold or other configuration parameter to read data from a storage cell.
1 . A method comprising:
obtaining soft read data for a storage cell of a non-volatile storage medium;
determining a configuration parameter for the storage cell based on the soft read data; and
using the determined configuration parameter to read data from the storage cell.
2 . The method of claim 1 , further comprising issuing a soft read command to a non-volatile memory element comprising the non-volatile storage medium, the soft read command issued for an error-correcting code (ECC) decoding operation such that the soft read data is used for the ECC decoding operation and for determining the configuration parameter.
3 . The method of claim 1 , wherein obtaining the soft read data comprises a non-volatile memory element performing a plurality of soft read operations in response to receiving a soft read command.
4 . The method of claim 1 , wherein obtaining the soft read data comprises receiving the soft read data from an error-correcting code (ECC) decoder.
5 . The method of claim 1 , further comprising providing the soft read data to an error-correcting code (ECC) decoder for correcting one or more data errors.
6 . The method of claim 1 , wherein the configuration parameter is determined without correcting data of the cell using an error-correcting code (ECC) decoding operation.
7 . The method of claim 1 , wherein the soft read data is obtained in response to one or more of a background scan for the storage cell, a storage capacity recovery event for the storage cell, a read request for data of the cell, and an error-correcting code (ECC) decoding operation for data of the cell.
8 . The method of claim 1 , wherein determining the soft read data comprises:
performing a first soft read operation using a first set of configuration parameters; and
performing a second soft read operation using a second set of configuration parameters, the second set of configuration parameters differing from the first set of configuration parameters, the soft read data comprising results from the first and second read operations.
9 . The method of claim 1 , further comprising determining whether the configuration parameter has been moved beyond a health threshold.
10 . The method of claim 9 , further comprising, in response to determining that the configuration parameter has been moved beyond a health threshold:
preserving valid data from an erase block comprising the storage cell in a different erase block in response to reading the valid data using the determined configuration parameter; and
performing a storage capacity recovery operation for the erase block in response to preserving the valid data.
11 . The method of claim 9 , further comprising performing one or more of: a retirement operation, a storage capacity recovery operation, and a conversion from a multi-level cell mode to a single-level cell mode for the storage cell, in response to determining that the configuration parameter has been moved beyond the health threshold.
12 . The method of claim 1 , further comprising determining a distribution model of stored read voltage levels for a set of storage cells comprising the storage cell based on soft read data for the set of storage cells, the configuration parameter for the storage cell determined based on the distribution model.
13 . The method of claim 1 , further comprising determining a write voltage threshold for the storage cell based on one of the soft read data and the determined configuration parameter, the determined configuration parameter comprising a read voltage threshold.
14 . An apparatus comprising:
a soft read module configured to issue a soft read command for a set of cells of a non-volatile memory medium;
a parameter module configured to adjust a read voltage threshold for the set of cells based on soft read information received in response to the soft read command; and
an error-correcting code (ECC) decoder configured to correct one or more errors in data of the set of storage cells using the soft read information.
15 . The apparatus of claim 14 , wherein the soft read module is configured to one or more of receive the soft read information from the error-correcting code decoder and provide the soft read information to the error-correcting code decoder.
16 . The apparatus of claim 14 , further comprising a media configuration module configured to configure the non-volatile memory medium to use the adjusted read voltage thresholds for the set of cells.
17 . The apparatus of claim 14 , wherein the soft read module is configured to issue three or more soft read commands for the set of cells, each soft read command triggering three or more soft reads of the set of cells.
18 . An apparatus comprising:
means for obtaining soft sensing information for storage cells of a non-volatile recording medium in response to a read request;
means for determining a read voltage threshold for the storage cells, the read voltage threshold determined based on the soft sensing information; and
means for reading data from the storage cells using the determined read voltage threshold.
19 . The apparatus of claim 18 , further comprising:
means for one or more of receiving the soft sensing information from an error-correcting code decoder and providing the soft sensing information to an error-correcting code decoder.
20 . The apparatus of claim 18 , further comprising means for correcting one or more errors in the data using the soft sensing information.