Photonic devices and methods of using and making photonic devices
Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).
1. A photonic device comprising:
a substrate;
a dielectric layer, disposed on the substrate, having a first refractive index;
at least one dielectric strip, disposed within the dielectric layer, having a second refractive index greater than the first refractive index; and
a gain layer, disposed in contact with the dielectric layer, having a third refractive index greater than the first refractive index to guide an optical pump beam and an optical signal beam in a propagation direction parallel to a longitudinal axis of the at least one dielectric strip so as to amplify the optical signal beam via stimulated emission,
wherein a majority of the optical pump beam is confined within the gain layer.
2. The photonic device of claim 1 , wherein:
the substrate comprises at least one of silicon, silicon-on-insulator, and glass;
the dielectric layer comprises silicon dioxide;
the at least one dielectric strip comprises silicon nitride; and
the gain layer comprises Al 2 O 3 :Er 3+ .
3. The photonic device of claim 1 , wherein the optical pump beam has a wavelength of λ p and the at least one dielectric strip is disposed a distance of about λ p /4 to about 20λ p from a boundary between the dielectric layer and the gain layer.
4. The photonic device of claim 1 , wherein the gain layer has a thickness of about λ p /10 to about 10λ p .
5. The photonic device of claim 4 , wherein the at least one dielectric strip comprises a plurality of dielectric strips, disposed within the dielectric layer between the substrate and the gain layer, to confine the optical pump beam within the gain layer in a direction orthogonal to the propagation direction.
6. The photonic device of claim 5 , wherein the plurality of dielectric strips comprises a first dielectric strip having at least one tapered section to couple energy from at least one of the optical pump beam and the optical signal beam from a first region in the gain layer above the first dielectric strip to a second region in the gain layer above a second dielectric strip in the plurality of dielectric strips.
7. The photonic device of claim 5 , wherein the plurality of dielectric strips comprises a first strip having at least one curved section to guide at least one of the optical pump beam and the optical signal beam along a curved path within the gain layer.
8. The photonic device of claim 1 , wherein the second refractive index is greater than the third refractive index.
9. The photonic device of claim 1 , wherein the dielectric strip comprises:
at least one grating to reflect at least a portion of the optical signal beam.
10. The photonic device of claim 9 , wherein the at least one grating at least partially defines a laser cavity in the gain layer at a wavelength of the optical signal beam.
11. A photonic device comprising:
a substrate;
a dielectric layer, disposed on the substrate, having a first refractive index;
at least one dielectric strip, disposed within the dielectric layer, having a second refractive index greater than the first refractive index; and
a gain layer, disposed in contact with the dielectric layer and having a third refractive index greater than the first refractive index, to guide an optical pump beam and an optical signal beam so as to amplify the optical signal beam via stimulated emission,
wherein the optical pump beam has a wavelength of λ p and the at least one dielectric strip is disposed a distance of at least λ p /4 from a boundary between the dielectric layer and the gain layer.