IP Library Granted Patent US 9,465,291
Granted Patent B2
US 9,465,291 · App. 14/200,505 · Granted Oct 11, 2016

Radiation-sensitive resin composition, polymer, compound, and method for producing compound

Inventor: Hayato Namai (Tokyo, JP)
Assignee: JSR CORPORATION
G03F7/0392C07C69/54C07D307/33C07D307/77C07D307/93C07D307/935C07D317/36C07D317/70C07D333/78C07D491/056C07D493/04C08F20/10C08F22/10C08F220/28C08F220/40C08L33/14G03C1/73G03F7/0397G03F7/11G03F7/20G03F7/2041G03F7/38C07C2101/08C07C2101/10C07C2101/14C07C2101/16C07C2102/28C07C2102/42
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,465,291
App. No.
14/200,505
Granted
Oct 11, 2016
Kind
B2
Abstract

A radiation-sensitive resin composition includes a polymer that includes a structural unit represented by a formula (1), and an acid generator. R 1 is a hydrogen atom, a fluorine atom, or the like. R 2 is a hydrogen atom or a monovalent hydrocarbon group. R 3 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R 4 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R 5 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R 6 is a monovalent chain hydrocarbon group. R 6 is bonded to R 3 to form a first alicyclic structure, or R 6 is bonded to R 5 to form a second alicyclic structure. At least one hydrogen atom of R 2 , R 3 , or R 4 is optionally substituted with a fluorine atom.

Claims (30)

1. A radiation-sensitive resin composition comprising:

a polymer that comprises a structural unit represented by formula (1-1); and

an acid generator,

wherein:

R 1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group;

R 2 is a hydrogen atom;

R C is an organic group to form a cyclopentene structure or a cyclohexene structure together with the carbon atom bonded to R 2 , with the carbon atom bonded to R 3 , and with the carbon atom bonded to R 4 , wherein the cyclopentene structure or the cyclohexene structure does not comprise —CO— or —CS— between carbon atoms included in the cyclopentene structure or the cyclohexene structure; and

R 3 and R 4 are each independently a hydrogen atom, a monovalent chain hydrocarbon group, a monovalent alicyclic hydrocarbon group, or a monovalent aromatic hydrocarbon group, wherein at least one hydrogen atom of the monovalent chain hydrocarbon group, the monovalent alicyclic hydrocarbon group, or the monovalent aromatic hydrocarbon group represented by R 3 or R 4 is optionally substituted with a fluorine atom, and in a case where R c forms the cyclohexene structure, at least one of R 3 and R 4 is a monovalent chain hydrocarbon group, a monovalent alicyclic hydrocarbon group, or a monovalent aromatic hydrocarbon group; or

R 4 is bonded to R 3 to form an alicyclic structure or an aromatic heterocyclic structure together with the carbon atom bonded to R 3 and with the carbon atom bonded to R 4 ; or

R 3 is a hydrogen atom, a monovalent chain hydrocarbon group, a monovalent alicyclic hydrocarbon group, or a monovalent aromatic hydrocarbon group, wherein at least one hydrogen atom of the monovalent chain hydrocarbon group, the monovalent alicyclic hydrocarbon group, or the monovalent aromatic hydrocarbon group represented by R 3 is optionally substituted with a fluorine atom, and R 4 is bonded to R C to form an alicyclic structure or an aromatic heterocyclic structure together with the carbon atom bonded to R 4 .

2. A resist pattern-forming method comprising:

applying the radiation-sensitive resin composition according to claim 1 to form a resist film on a substrate;

exposing the resist film to ultraviolet rays, deep ultraviolet rays, extreme ultraviolet light, X-rays or charged particle rays;

heating the exposed resist film; and

developing the heated resist film to produce a pattern.

3. The resist pattern-forming method according to claim 2 , wherein the exposed resist film is heated at 90° C. or less.

4. The radiation-sensitive resin composition according to claim 1 , wherein R c forms the cyclopentene structure, and R 3 and R 4 are each independently a hydrogen atom, a monovalent chain hydrocarbon group, or a monovalent alicyclic hydrocarbon group.

5. The radiation-sensitive resin composition according to claim 1 , wherein R c forms the cyclohexene structure, R 3 and R 4 are each independently a hydrogen atom, a monovalent chain hydrocarbon group or a monovalent alicyclic hydrocarbon group, and at least one of R 3 and R 4 is a monovalent chain hydrocarbon group, or a monovalent alicyclic hydrocarbon group.

6. The radiation-sensitive resin composition according to claim 1 , wherein R c forms the cyclopentene structure, and R 3 and R 4 are each independently a hydrogen atom or a monovalent chain hydrocarbon group.

7. The radiation-sensitive resin composition according to claim 1 , wherein R c forms the cyclohexene structure, and R 3 and R 4 are each independently a hydrogen atom or a monovalent chain hydrocarbon group, and at least one of R 3 and R 4 is a monovalent chain hydrocarbon group.

8. The radiation-sensitive resin composition according to claim 1 , wherein the alicyclic structure formed by R 3 and R 4 is an alicyclic hydrocarbon structure or an aliphatic heterocyclic structure.

9. The radiation-sensitive resin composition according to claim 1 , wherein the aromatic heterocyclic structure formed by R 3 and R 4 is a thiophene structure or a furan structure.

10. The radiation-sensitive resin composition according to claim 1 , wherein the alicyclic structure formed by R 4 and R C is a cyclopentane structure or a cyclohexane structure.

11. The radiation-sensitive resin composition according to claim 1 , wherein a content of the structural unit represented by formula (1-1) in the polymer is from 10 to 80 mol % based on total structural units included in the polymer.

12. The radiation-sensitive resin composition according to claim 1 , wherein a content of the structural unit represented by formula (1-1) in the polymer is from 20 to 70 mol % based on total structural units included in the polymer.

13. The radiation-sensitive resin composition according to claim 1 , wherein a content of the structural unit represented by formula (1-1) in the polymer is from 30 to 60 mol % based on total structural units included in the polymer.

14. The radiation-sensitive resin composition according to claim 1 , wherein the polymer further comprises at least one structural unit selected from the group consisting of a structural unit that comprises a lactone structure and a structural unit that comprises a cyclic carbonate structure.

15. The radiation-sensitive resin composition according to claim 1 , wherein the polymer further comprises a structural unit that comprises a fluorine atom.

16. The radiation-sensitive resin composition according to claim 1 , wherein the structural unit represented by formula (1-1) comprises a fluorine atom.

17. The radiation-sensitive resin composition according to claim 1 , further comprising a solvent.

Assignments (3)
MERGER Recorded Mar 23, 2026
From: JSR CORPORATION
To: JICC-02, CO., LTD
Reel/Frame 075191/0149 →
CHANGE OF NAME Recorded Mar 23, 2026
From: JICC-02 CO., LTD
To: JSR CORPORATION
Reel/Frame 075192/0023 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2014
From: NAMAI, HAYATO
To: JSR CORPORATION
Reel/Frame 032377/0220 →
Priority Claims (2)
JP 2011-290144 · Dec 28, 2011 · national
JP 2012-154159 · Jul 9, 2012 · national
Continuity (2)
Continuation PCTJP2012083754 · Dec 26, 2012
Related Publication 20140186771A1 · Jul 3, 2014