IP Library Granted Patent US 9,299,572
Granted Patent B2
US 9,299,572 · App. 14/201,473 · Granted Mar 29, 2016

Thermal vias disposed in a substrate without a liner layer

Inventor: Guilian Gao (San Jose, CA)
Assignee: Invensas Corporation
H01L21/30625H01L21/308H01L21/30604H01L21/31111H01L21/3212H01L21/76829H01L21/76843H01L21/76898H01L23/3677H01L23/481H01L23/538H01L2224/16145H01L2224/16225H01L2224/32225H01L2224/73204H01L2224/73253H01L2924/15311
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Quick Facts
Patent No.
US 9,299,572
App. No.
14/201,473
Granted
Mar 29, 2016
Kind
B2
Abstract

An apparatus relating generally to a substrate is disclosed. In such an apparatus, the substrate has formed therein a plurality of vias. A liner layer is located on the substrate, including being located in a subset of the plurality of vias. At least one of the plurality of vias does not have the liner layer located therein. A thermally conductive material is disposed in the at least one of the plurality of vias to provide a thermal via structure.

Claims (35)

1. An apparatus, comprising:

a substrate having formed therein a plurality of vias;

a liner layer located on the substrate including being located in a subset of the plurality of vias;

wherein at least one of the plurality of vias does not have the liner layer located therein;

a thermally conductive material disposed in the at least one of the plurality of vias without a liner layer to provide a thermal via structure for conducting heat from one die to another die to conduct to a heat sink; and

a conductive material different than the thermally conductive material disposed in the subset of the plurality of vias having the liner layer.

2. The apparatus according to claim 1 , further comprising:

a barrier layer disposed in the at least one of the plurality of vias to provide the thermal via structure;

wherein the barrier layer is disposed between the thermally conductive material and the substrate; and

wherein the barrier layer provides sufficient protection against diffusion of the thermally conductive material into the substrate.

3. The apparatus according to claim 2 , wherein the thermally conductive material has a thermal conductivity value equal to or greater than approximately 150 W/(mK).

4. The apparatus according to claim 3 , wherein the thermally conductive material includes a metal.

5. The apparatus according to claim 4 , wherein the metal is selected from a group consisting of aluminum, copper, gold, silver, tungsten, and solder.

6. The apparatus according to claim 2 , wherein the barrier layer has a thermal conductivity value in a range of approximately 5 to 70 W/(mK).

7. The apparatus according to claim 2 , wherein the liner layer has a thermal conductivity value equal to or less than approximately 3 W/(mK).

8. The apparatus according to claim 2 , wherein the thermally conductive material includes a carbon-based material.

9. The apparatus according to claim 8 , wherein the carbon-based material includes graphene.

10. The apparatus according to claim 1 , wherein the at least one thermal via structure is a portion of a through die thermal via.

11. The apparatus according to claim 10 , wherein the through die thermal via is of an integrated circuit die of a die stack.

12. An apparatus, comprising:

a substrate having formed therein a plurality of vias;

at least one of the plurality of vias being an electrically conductive via having an electrically insulating liner layer between the via and at least a portion of the substrate, the electrically conductive via including a first conductive material; and

at least one other of the plurality of vias being a thermally conductive via that directly contacts at least a portion of the substrate, the thermally conductive via coupled to a heat sink, the thermally conductive via including a second conductive material that is different than the first conductive material.

13. The apparatus according to claim 12 , wherein the thermally conductive via does not have the liner layer located therein.

14. The apparatus according to claim 12 , wherein the thermally conductive via comprises a barrier layer disposed therein.

15. The apparatus according to claim 12 , wherein the thermally conductive via is not coupled for conducting an electrical signal.

16. The apparatus according to claim 12 , wherein the thermally conductive via is extends through the substrate between an upper surface and a lower surface thereof.

17. An apparatus, comprising:

a substrate having formed therein a plurality of vias;

a liner layer located in a subset of the plurality of vias, at least one of the plurality of vias not having the liner layer located therein;

a thermally conductive material disposed in the at least one of the plurality of vias to provide a thermal via structure for conducting heat from one die to another die;

a heat sink coupled to the thermal via structure for conduction of heat from the substrate to the heat sink; and

an electrically conductive material different than the thermally conductive material disposed in the subset of the plurality of vias having the liner layer.

18. The apparatus according to claim 17 , further comprising a barrier layer disposed in the at least one of the plurality of vias to provide the thermal via structure.

19. The apparatus according to claim 17 , wherein the thermal via structure is not coupled for conducting an electrical signal.

Assignments (6)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073508/0668 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0751 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2014
From: GAO, GUILIAN
To: INVENSAS CORPORATION
Reel/Frame 032383/0061 →
Continuity (1)
Related Publication 20150255364A1 · Sep 10, 2015