Wafer stack protection seal

1. A method of forming a semiconductor device comprising:

providing first and second wafers with top and bottom surfaces, the wafers include edge and non-edge regions, wherein the first wafer includes devices formed in the non-edge region;

forming a first protection seal at the edge region of the first wafer, wherein the protection seal is formed by depositing a polymer material on the top surface of the first wafer to a height about 10-40% greater than a final gap between the first and second wafers when bonded; and

bonding the first and second wafers to form a device stack, wherein the polymer material on the first wafer contacts the second wafer and is compressed by the first and second wafers, the polymer material expands laterally to cover at least partially edges of the wafers and form a bonded wafer protection seal, the bonded wafer protection seal protects the devices in subsequent processing.

2. The method of claim 1 wherein the protection seal is formed of pliable material.

3. The method of claim 1 wherein the protection seal is formed of polyimide, polysulfone, lead (II) oxide (PbO), or benzocyclobutene (BCB).

4. The method of claim 1 wherein the protection seal is formed by dispensing.

5. The method of claim 1 further comprising forming a second protection seal at the edge region of the second wafer.

6. The method of claim 5 wherein the protection seals are formed on the top surfaces of the first and second wafers.

7. The method of claim 5 wherein the first protection seal is formed on the top surface of the first wafer while the second protection seal is formed on bottom surface of the second wafer.

8. The method of claim 1 further comprising forming a second protection seal at the edge region of the first wafer, wherein the first protection seal is an outer seal and the second protection seal is an inner seal.

9. The method of claim 8 wherein the second protection seal is formed of a metallic material.

10. The method of claim 9 wherein bonding the first and second wafers comprises first and second wafer bonding processes, the first bonding process includes thermocompression bonding and the second wafer bonding process includes thermally cured polymer bonding.

11. A method of forming a semiconductor device comprising:

providing first and second wafers with top and bottom surfaces, the wafers include edge and non-edge regions, wherein the first wafer includes devices formed in the non-edge region;

forming device seals that surround the devices in the non-edge region of the first wafer;

forming a first protection seal ring at the edge region of the first wafer such that the first protection seal ring surrounds the devices and device seals in the non-edge region, wherein the device seals and the first protection seal ring are formed on the top surface of the first wafer in the same deposition process step, the deposition process comprises

forming a sealing material on the top surface of the first wafer, and

patterning the sealing material to form the device seals which surround the devices at the non-edge region of the first wafer, and the first protection seal ring at the edge region which surrounds the devices and device seals in the non-edge region;

forming a second protection seal ring at the edge region of the second wafer;

bonding the first and second wafers to form a device stack, wherein the first protection seal ring on the first wafer contacts the second protection seal ring on the second wafer to form a bonded wafer seal ring, the bonded wafer seal ring protects the devices in subsequent processing.

12. The method of claim 11 wherein the sealing material of the protection seal and the device seals is a metallic material.

13. The method of claim 12 further comprising:

forming device seals on the second wafer, and

wherein bonding the first and second wafers comprises a bonding process that bonds the device seals and protection seals of the first and second wafers in the same bonding process step.

14. The method of claim 13 further comprising providing multiple wafers and bonding the wafers to form a device stack, wherein the first protection seal is formed on the top surface of the first wafer, and other protection seals are formed on the top and/or bottom surfaces of the other wafers.

15. The method of claim 12 wherein the protection seal is formed of copper, gold, tin, their alloys or a combination thereof.

16. The method of claim 11 wherein the device seals and the first protection seal ring are formed to the same height on the top surface of the first wafer in the same deposition process step.

17. The method of claim 1 wherein the first and second wafers comprise the same size.

18. The method of claim 12 further comprising forming a third protection seal ring at the edge region of the first wafer, wherein the first protection seal ring is an inner seal ring and the third protection seal ring is an outer seal ring.

19. The method of claim 18 wherein the third protection seal ring is formed of a polymer material.

20. The method of claim 19 further comprising:

forming a fourth protection seal ring at the edge region of the second wafer, wherein the second protection seal ring is an inner seal and the fourth protection seal ring is an outer seal; and

wherein the third protection seal ring on the first wafer contacts the fourth protection seal ring on the second wafer to form a second bonded wafer seal ring during the bonding process, the second bonded wafer seal ring protects the devices in subsequent processing.