FinFET body contact and method of making same

1. A method of forming a semiconductor structure, the method comprising:

forming a semiconductor fin on a substrate;

forming a first gate structure on a top surface and sidewalls of the semiconductor fin;

forming a second gate structure on the top surface and sidewalls of the semiconductor fin, the second gate structure being laterally spaced from the first gate structure;

forming a third gate structure on the top surface and sidewalls of the semiconductor fin, the third gate structure being laterally spaced form the first gate structure in a direction opposite from the second gate structure;

forming a first source/drain region in the semiconductor fin, the first source/drain region being laterally between the first gate structure and the second gate structure;

forming a second source/drain region in the semiconductor fin, the second source/drain region being laterally between the first gate structure and the third gate structure;

forming a first body contact in the semiconductor fin, the first body contact being laterally spaced from first source/drain region, the second gate structure being laterally between the first source/drain region and the first body contact; and

forming a second body contact in the semiconductor fin, the second body contact being laterally spaced from second source/drain region, the third gate structure being laterally between the second source/drain region and the second body contact.

2. The method of claim 1 , wherein the forming the first source/drain region comprises:

patterning the semiconductor fin to form a first recess; and

epitaxially growing the first source/drain region in the first recess.

3. The method of claim 1 further comprising:

forming a third source/drain region in the semiconductor fin, the third source/drain region being laterally spaced from the second source/drain region in a direction opposite the first source/drain region.

4. The method of claim 1 further comprising:

forming a fourth gate structure on the top surface and sidewalls of the semiconductor fin, wherein the fourth gate structure partially overlaps the first body contact.

5. The method of claim 1 further comprising:

forming a fourth gate structure on the top surface and sidewalls of the semiconductor fin; and

forming an isolation region in the semiconductor fin adjoining the first body contact, the fourth gate structure partially overlapping the isolation region and partially overlapping the first body contact.

6. The method of claim 1 , wherein the first gate structure is an active gate, and the second gate structure and the third gate structure are dummy gates.

7. The method of claim 1 further comprising:

implanting the semiconductor fin with dopants of a first conductivity type;

implanting the first source/drain region with dopants of a second conductivity type; and

implanting the first body contact with dopants of the first conductivity type.

8. The method of claim 1 , wherein a first portion of the semiconductor fin extends from the first body contact to the first source/drain region, the first portion being a semiconductor material.

9. A method comprising:

forming a fin extending from a substrate;

forming a first gate and a second gate over the fin;

forming a first source/drain region in the fin between the first and second gates; and

forming a first body contact in the fin, the second gate partially overlapping the first body contact.

10. The method of claim 9 further comprising:

forming a third gate over the fin between the first source/drain region and the first body contact.

11. The method of claim 10 , wherein the third gate is directly over a first portion of the fin, the first portion being a semiconductor material.

12. The method of claim 9 further comprising:

doping the fin with dopants of a first conductivity type;

wherein the forming the first source/drain region in the fin comprises doping the first source/drain region with dopants of a second conductivity type; and

wherein the forming the first body contact in the fin comprises doping the first body contact with dopants of the first conductivity type.

13. The method of claim 12 , wherein the first conductivity type is p-type and the second conductivity type is n-type.

14. The method of claim 9 further comprising:

forming a first isolation region in the fin, the second gate partially overlapping the first isolation region.

15. The method of claim 9 further comprising:

forming a fourth gate over the fin;

forming a second source/drain region laterally between the first gate and the fourth gate; and

forming a second body contact in the fin, the fourth gate partially overlapping the second body contact.

16. The method of claim 15 , wherein the first gate is an active gate, and wherein the second and fourth gates are dummy gates.

17. A method comprising:

forming a semiconductor fin raised above a substrate;

forming a first active gate over the semiconductor fin;

forming a first dummy gate over the semiconductor fin;

forming a first source/drain region in the semiconductor fin between the first active gate and the first dummy gate, the first source/drain region being adjacent a first side of the first dummy gate;

forming a first body contact in the semiconductor fin adjacent a second side of the first dummy gate, the second side being opposite the first side, the first dummy gate being aligned with the first body contact; and

forming a spacer overlapping the first body contact.

18. The method of claim 17 , wherein the first dummy gate is over a first portion of the semiconductor fin, the first portion extending from the first body contact to the first source/drain region, the first portion being a semiconductor material.

19. The method of claim 17 further comprising:

forming a second dummy gate over the fin;

forming a second source/drain region in the semiconductor fin between the first active gate the second dummy gate; and

forming a second body contact in the semiconductor fin adjacent the second dummy gate.

20. The method of claim 1 , wherein the second gate structure is aligned with the first body contact.