Solid-state imaging device, method of manufacturing the same, and electronic equipment
A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.
1. An imaging device, comprising:
a semiconductor layer having a first side as a light-incident side and a second side opposite to the first side, the semiconductor layer including a photoelectric conversion element;
a first film adjacent to the first side of the semiconductor layer;
an insulating film disposed on the first film;
an isolation region including a light-shielding portion located on the insulating film;
a second film including a nitride element and located on the first film and the light-shielding portion; and
a wiring layer disposed adjacent to the second side of the semiconductor layer,
wherein,
at least a portion of the isolation region is disposed adjacent to the photoelectric conversion element,
the insulating film and the light-shielding portion are surrounded by the first film and the second film in a cross-section view, and
wherein a surface of the second film that is furthest from the first film has a concave shape from a viewpoint of the first film that corresponds with the light-shielding portion and the insulating film in the cross-section view.
2. The imaging device of claim 1 wherein the light-shielding portion is embedded in the second film.
3. The imaging device of claim 1 wherein the isolation region includes a separation region between the photoelectric conversion element and an adjacent photoelectric conversion element.
4. The imaging device of claim 3 wherein the light-shielding portion and the insulating film are located at a light-receiving side of the separation region, and wherein the light-shielding portion and the insulating film are not located at a light-receiving side of the photoelectric conversion element.
5. The imaging device of claim 3 wherein the isolation region includes a trench located in the separation region, wherein,
the light-shielding portion is located inside the trench.
6. The imaging device of claim 1 wherein the photoelectric conversion element has a first side which receives light.
7. The imaging device of claim 6 wherein the first film and the second film are located over the first side of the photoelectric conversion element.
8. The imaging device of claim 1 wherein a thickness of the first film is smaller than a thickness of the second film.
9. The imaging device of claim 1 wherein the first film includes at least one of an oxide of hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, lanthanoid and silicon element.
10. The imaging device of claim 9 , wherein the isolation region includes a trench, wherein the first film is located inside the trench.
11. The imaging device of claim 1 wherein the second film includes at least one of an oxide of hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, lanthanoid and silicon element.
12. The imaging device of claim 1 wherein the first film has a refraction index of 1.5 or more.
13. The imaging device of claim 12 wherein the second film has a refraction index of 1.5 or more.
14. The imaging device of claim 13 further comprising a plurality of transistors located adjacent to the second side of the semiconductor layer.
15. The imaging device of claim 14 wherein the plurality of transistors includes a transfer transistor that transfers an electric charge from the photoelectric conversion element to a floating diffusion.
16. The imaging device of claim 15 , wherein the plurality of transistors includes an amplification transistor having a gate terminal connected to the floating diffusion.
17. The imaging device of claim 16 , wherein the plurality of transistors includes a reset transistor having a first terminal connected to the floating diffusion and a second terminal connected to a predetermined voltage source.
18. The imaging device of claim 17 wherein the plurality of transistors includes a selection transistor operatively connected to a signal line.
19. The imaging device of claim 18 , wherein the signal line is electrically connected to a column circuit, wherein the column circuit includes at least a CDS circuit.
20. The imaging device of claim 1 , wherein the light-shielding portion includes tungsten and titanium nitride.
21. The imaging device of claim 20 , wherein a thickness of the light-shielding portion is from 100 nm to 400 nm.
22. The imaging device of claim 1 , wherein the first film is hafnium oxide, and the light-shielding portion includes titanium.
23. The imaging device of claim 1 , wherein a micro lens is disposed adjacent to the first side of the semiconductor layer and a color filter is disposed between the micro lens and the first side of the semiconductor layer.
24. The imaging device of claim 1 , wherein the insulating film and the light-shielding portion are entirely enclosed within the first film and the second film in the cross-section view.
25. The imaging device of claim 1 , wherein the wiring layer is disposed between the second side of the semiconductor layer and a support substrate.
26. The imaging device of claim 1 , wherein a thickness of the first film is 80 nm or less.
27. The imaging device of claim 1 , wherein a substantially convex shape is formed in the cross-section view and an interior of the convex shape includes the insulating film and the light-shielding portion, and wherein all exterior sides within the convex shape are in contact with only the first film and the second film in the cross-section view.
28. An imaging device, comprising:
a semiconductor layer having a first side as a light-incident side and a second side opposite to the first side, the semiconductor layer including a photoelectric conversion element;
a first film adjacent to the first side of the semiconductor layer;
an insulating film disposed on the first film;
an isolation region including a light-shielding portion located on the insulating film;
a second film located on the first film and the light-shielding portion and including a nitride element; and
a wiring layer disposed adjacent to the second side of the semiconductor layer;
wherein the first film and second film together form an enclosure with the insulating film and the light-shielding portion within the enclosure from a viewpoint of the first film in a cross-section view.