Ferroelectric field-effect transistor

1. A ferroelectric field-effect transistor device, comprising:

a semiconductor layer;

a ferroelectric layer; and

an ion conductor layer arranged between said semiconductor layer and said ferroelectric layer and in contact with the semiconductor layer.

2. The device of claim 1 , further comprising:

a source electrode arranged in electronic contact with the said semiconductor;

a drain electrode arranged in electronic contact with the said semiconductor; and

a gate electrode;

said ferroelectric layer being arranged between said gate electrode and said ion conductor layer.

3. The device of claim 1 , wherein at least one of the semiconductor, the ferroelectric and the ion conductor comprise organic materials.

4. The device of claim 1 , wherein at least one of the semiconductor, the ferroelectric and the ion conductor is appliable by liquid deposition techniques.

5. The device of claim 1 , wherein the semiconductor is selected from the group consisting of semiconducting polymers.

6. The device of claim 1 , wherein the ferroelectric is selected from the group consisting of ferroelectric polymers.

7. The device of claim 1 , wherein the ion conductor is selected from the group consisting of polymeric electrolytes.

8. The device of claim 2 , further comprising a polymeric interlayer, said interlayer being arranged between said gate electrode and said ferroelectric layer.

9. The device of claim 1 , arranged on a substrate.

10. A non-volatile memory device comprising the ferroelectric field-effect transistor device of claim 1 .

11. Method of producing a ferroelectric field-effect transistor device, comprising:

providing a substrate;

applying a semiconductor layer;

applying a ferroelectric layer; and

applying an ion conductor layer;

wherein said ion conductor layer is arranged between said semiconductor layer and said ferroelectric layer and in contact with the semiconductor layer.

12. The method according to claim 11 , further comprising:

applying a source electrode to the substrate;

applying a drain electrode to the substrate;

applying the semiconductor layer in electronic contact with said source and drain electrodes;

applying the ion conductor layer to the semiconductor layer;

applying the ferroelectric layer to the ion conductor layer; and

applying a gate electrode to the ferroelectric layer.

13. The method according to claim 11 , further comprising:

applying a gate electrode to the substrate;

applying the ferroelectric layer to the gate electrode;

applying the ion conductor layer to the ferroelectric layer;

applying the semiconductor layer to the ion conductor layer;

applying a source electrode in electronic contact with the said semiconductor; and

applying a drain electrode in electronic contact with the said semiconductor.

14. The method of claim 12 , further comprising applying a polymeric interlayer between said gate electrode and said ferroelectric layer.

15. The method of claim 11 , wherein the semiconductor layer, the ferroelectric layer and the ion conductor layer are applied by liquid deposition techniques.

16. The method of claim 11 , wherein said substrate is a solid substrate.

17. A method, comprising:

outputting, using an ion conductor layer between a ferroelectric layer and a semiconductor layer of a ferroelectric field-effect transistor device, readout voltage of a non-volatile memory device including the ferroelectric field-effect transistor device to a voltage as low as 0.2 V.

18. The device of claim 9 , wherein the substrate is a flexible solid substrate.

19. A non-volatile memory device comprising the ferroelectric field-effect transistor device of claim 2 .

20. The method of claim 16 , wherein the solid substrate is a flexible solid substrate.