Semiconductor light emitting device and method for manufacturing the same
A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.
1. A light emitting device comprising:
a first conductive type semiconductor layer;
a first delta doped layer on the first conductive type semiconductor layer;
a super lattice structure on the first delta doped layer;
an active layer on the super lattice layer;
a second conductive type cladding layer on the active layer; and
a second conductive type semiconductor layer on the second conductive type cladding layer,
wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.
2. The light emitting device according to claim 1 , wherein the first delta doped layer is formed at a thickness of 0.2 nm˜0.5 nm.
3. The light emitting device according to claim 1 , wherein the super lattice structure is formed at a thickness of 5 Ř200 Å.
4. The light emitting device according to claim 1 , wherein the first conductive type semiconductor layer is a n-type semiconductor layer.
5. The light emitting device according to claim 1 , wherein the first conductive type layer comprises a GaN layer.
6. The light emitting device according to claim 1 , wherein the active layer includes InGaN layer and GaN layer.
7. The light emitting device according to claim 1 , further comprising a dopant doped layer under the first conductive semiconductor layer.
8. The light emitting device according to claim 7 , wherein the dopant doped layer is an n-type semiconductor layer.
9. The light emitting device according to claim 1 , further comprising a third semiconductor layer on the second conductive type semiconductor layer,
wherein the third semiconductor layer is a n-type semiconductor layer.
10. The light emitting device according to claim 9 , wherein the third semiconductor layer has a composition formula of In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).
11. The light emitting device according to claim 1 , wherein the first delta doped layer and the first conductive type semiconductor layer are doped with an n-type dopant.
12. A light emitting device comprising:
a first conductive type semiconductor layer comprising an AlGaN layer;
a first delta doped layer on the first conductive type semiconductor layer;
a super lattice structure on the first delta doped layer;
a second delta doped layer on the super lattice structure;
an active layer on the second delta doped layer;
a second conductive type cladding layer on the active layer; and
a second conductive type semiconductor layer on the second conductive type cladding layer,
wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.
13. The light emitting device according to claim 12 , wherein a ratio of the thickness of the super lattice structure to a thickness of the second delta doped layer is in a range of about 1 to 100.
14. The light emitting device according to claim 12 , further comprising a dopant doped layer under the first conductive type semiconductor layer.
15. The light emitting device according to claim 14 , wherein the dopant doped layer is an n-type semiconductor layer.
16. A light emitting device comprising:
a first conductive type semiconductor layer comprising an AlGaN layer;
a first delta doped layer on the first conductive type semiconductor layer;
a second delta doped layer on the first delta doped layer;
a super lattice structure on the first delta doped layer;
a third delta doped layer on the super lattice structure;
an active layer on a third delta doped layer;
a second conductive type cladding layer on the active layer; and
a second conductive type semiconductor layer on the second conductive type cladding layer,
wherein a ratio of a thickness of the super lattice structure to a thickness of the first delta doped layer is in a range of about 1 to 100.
17. The light emitting device according to claim 16 , wherein a ratio of the thickness of the super lattice structure to a thickness of the second delta doped layer is in a range of about 1 to 100.
18. The light emitting device according to claim 16 , wherein a ratio of the thickness of the super lattice structure to a thickness of the third delta doped layer is in a range of about 1 to 100.
19. The light emitting device according to claim 16 , further comprising a dopant doped layer under the first conductive type semiconductor layer.
20. The light emitting device according to claim 19 , wherein the dopant doped layer is an n-type semiconductor layer.