Topography minimization of neutral layer overcoats in directed self-assembly applications
A method is provided for patterning a layered substrate that includes loading a substrate into a coater-developer processing system; coating the substrate with a photoresist material layer; patterning the photoresist material layer to form a photoresist pattern; transferring the substrate to a deposition processing system; and depositing a neutral layer over the photoresist pattern and exposed portions of the substrate. The neutral layer can deposited using a gas cluster ion beam (GCIB) process, or an atomic layer deposition (ALD) process, which has minimal topography. The method may further include lifting off a portion of the neutral layer deposited over the photoresist pattern to expose a neutral layer template for subsequent directed self-assembly (DSA) patterning; depositing a DSA material layer over the neutral layer template; baking the DSA material layer to form a DSA pattern; and developing the DSA material layer to expose the final DSA pattern for subsequent feature etching.
1. A method for patterning a layered substrate, comprising:
loading a substrate into a coater-developer processing system;
coating the substrate with a photoresist material to form a photoresist material layer on the substrate;
patterning the photoresist material layer to form a photoresist pattern on the substrate;
transferring the substrate to a deposition processing system; and
depositing a neutral layer over the photoresist pattern and exposed portions of the substrate, wherein the deposition processing system is a gas cluster ion beam (GCIB) system, the neutral layer is deposited using GCIB deposition of gas cluster ions formed from a first gas mixture, and the first gas mixture is tuned to set the chemical properties of the neutral layer for subsequent directed self-assembly (DSA) patterning.
2. The method of claim 1 , wherein the neutral layer is anisotropically deposited over the photoresist pattern and exposed portions of the substrate.
3. The method of claim 1 , wherein the first gas mixture comprises at least one C-containing gas.
4. The method of claim 1 , wherein the first gas mixture comprises at least one O-containing gas.
5. The method of claim 1 , wherein the first gas mixture comprises at least one H-containing gas.
6. The method of claim 1 , wherein the first gas mixture comprises at least one Si-containing gas.
7. The method of claim 1 , further comprising:
trimming the photoresist pattern subsequent to patterning of the photoresist material.
8. The method of claim 1 , further comprising:
hardening the photoresist pattern subsequent to patterning of the photoresist material, to render the photoresist pattern resistant to subsequent deposition of the neutral layer.
9. A method for patterning a layered substrate, comprising:
loading a substrate into a coater-developer processing system;
coating the substrate with a photoresist material to form a photoresist material layer on the substrate;
patterning the photoresist material layer to form a photoresist pattern on the substrate;
transferring the substrate to a deposition processing system;
depositing a neutral layer over the photoresist pattern and exposed portions of the substrate;
lifting off a portion of the neutral layer deposited over the photoresist pattern to expose a neutral layer template for subsequent directed self-assembly (DSA) patterning;
depositing a DSA material layer over the neutral layer template;
baking the DSA material layer to form a DSA pattern; and
developing the DSA material layer to expose the final DSA pattern for subsequent feature etching.
10. The method of claim 9 , wherein the deposition processing system is an atomic layer deposition (ALD) system, and the neutral layer is deposited using ALD deposition utilizing at least one precursor gas.
11. The method of claim 10 , wherein the neutral layer is isotropically deposited over the photoresist pattern and exposed portions of the substrate.
12. The method of claim 10 , wherein the at least one precursor gas comprises a C-containing gas.
13. The method of claim 10 , wherein the at least one precursor gas comprises a H-containing gas.
14. The method of claim 10 , wherein the at least one precursor gas comprises an O-containing gas.
15. The method of claim 10 , wherein the at least one precursor gas comprises a Si-containing gas.
16. A method for patterning a layered substrate, comprising:
loading a substrate into a coater-developer processing system;
coating the substrate with a photoresist material to form a photoresist material layer on the substrate;
patterning the photoresist material layer to form a photoresist pattern on the substrate;
transferring the substrate to a deposition processing system; and
depositing a neutral layer over the photoresist pattern and exposed portions of the substrate, wherein the deposition processing system is an atomic layer deposition (ALD) system, the neutral layer is deposited using ALD deposition utilizing at least one precursor gas, and the at least one precursor gas is tuned to set the chemical properties of the neutral layer for subsequent directed self-assembly (DSA) patterning.
17. The method of claim 16 , wherein the neutral layer is isotropically deposited over the photoresist pattern and exposed portions of the substrate.
18. The method of claim 16 , wherein the at least one precursor gas comprises a C-containing gas, a H-containing gas, an O-containing gas, or a Si-containing gas.
19. The method of claim 16 , further comprising:
trimming the photoresist pattern subsequent to patterning of the photoresist material.
20. The method of claim 16 , further comprising:
hardening the photoresist pattern subsequent to patterning of the photoresist material, to render the photoresist pattern resistant to subsequent deposition of the neutral layer.