PEALD of films comprising silicon nitride
Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
1. A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface, wherein the silicon precursor comprises (X y H 3-y Si) z CH 4-z , wherein X is a halide selected from the group consisting of Cl, Br, and I, y has a value of 0 to 3 and z has a value of 1 to 3;
purging excess silicon precursor;
exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor; and
purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
2. The method of claim 1 , wherein the substrate temperature ranges from about 200 to about 400° C.
3. The method of claim 1 , wherein the ionized reducing agent comprises ammonia, nitrogen, hydrogen, an alkyl amine, hydrazine or a substituted hydrazine.
4. The method of claim 3 , wherein the alkyl amine comprises dimethyl amine.
5. The method of claim 3 , wherein the substituted hydrazine comprises CH 3 N 2 H.
6. The method of claim 1 , wherein the silicon precursor comprises hexachlorodisilane.
7. The method of claim 1 , wherein the film comprising SiN has a thickness of about 50 to about 500 Angstroms.
8. The method of claim 1 , further comprising exposing the film comprising SiN to a plasma treatment to increase the tensile strength of the film.
9. The method of claim 7 , wherein the film comprising SiN has a thickness of about 10 to about 40 Angstroms.
10. A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
(a) exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface, the silicon precursor comprising a compound having the formula (X y H 3-y Si) z CH 4-z , where X is one or more of Cl, Br or I, y is from 0 to 3 and z is from 1 to 4;
(b) purging excess silicon precursor;
(c) exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor;
(d) purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.;
(e) repeating (a)-(d);
(f) exposing the film comprising SiN to a plasma treatment once about 10 to about 40 Angstroms of film have been deposited, wherein the film has a pattern loading effect of less than about 5.
11. A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
loading a substrate into a processing chamber;
exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface, wherein the silicon precursor comprises a compound with a formula of (X y H 3-y Si)(CH 2 ) n (SiX y H 3-y ), wherein X is a halogen selected from Cl, Br or I, y is from 1 to 3 and n is 2 or 3, or a compound with a formula of (X y H 3-y Si)(CH 2 )(SiX p H 2-p )(CH 2 )(SiX y H 3-y ), where X is a halogen selected from Cl, Br or I, y is from 1 to 3 and p is 0 to 2;
purging excess silicon precursor;
exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor, wherein the ionized reducing agent comprises a substituted hydrazine generated externally from the processing chamber; and
purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.