Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the same
A method for fabricating a semiconductor device includes forming an NMOS region and a PMOS region in a substrate, forming a first stack layer including a first gate dielectric layer and a first work function layer that is disposed over the first gate dielectric layer and contains aluminum, over the PMOS region of the substrate, forming a second stack layer including a second gate dielectric layer, a threshold voltage modulation layer that is disposed over the second gate dielectric layer and contains lanthanum, and a second work function layer that is disposed over the threshold voltage modulation layer, over the NMOS region of the substrate, and annealing the first stack layer and the second stack layer, thereby forming a first dipole-interface by diffusion of the aluminum in the first gate dielectric layer and a second dipole-interface by diffusion of the lanthanum in the second gate dielectric layer, respectively.
1. A method for fabricating a semiconductor device, comprising:
forming an NMOS region and a PMOS region in a substrate;
forming a gate dielectric layer over the substrate;
forming a first work function layer that contains aluminum over the gate dielectric layer;
forming a reaction preventing layer consisting of polysilicon over the first work function layer;
selectively removing the reaction preventing layer and the first work function layer from the NMOS region;
forming a threshold voltage modulation layer that contains lanthanum over the remaining reaction preventing layer of the PMOS region and the gate dielectric layer of the NMOS region;
forming a second work function layer over the threshold voltage modulation layer; and
annealing, thereby forming a first dipole-interface by diffusion of the aluminum into the gate dielectric layer of the PMOS region and a second dipole-interface by diffusion of the lanthanum into the gate dielectric layer of the NMOS region, respectively,
wherein the remaining reaction preventing layer is formed between the first work function layer and the threshold voltage modulation layer over the PMOS region.
2. The method according to claim 1 , wherein, before the annealing, the method further comprises:
etching the second work function layer, the threshold voltage modulation layer, the remaining reaction preventing layer, the remaining first work function layer, and the gate dielectric layer over the PMOS region, thereby forming a first gate stack over the PMOS region;
etching the second work function layer, the threshold voltage modulation layer and the gate dielectric layer over the NMOS region, thereby forming a second gate stack over the NMOS region; and
implanting impurities into the substrate to form sources/drains,
wherein the annealing includes annealing for activating the sources/drains.
3. The method according to claim 1 , wherein, before the annealing, the method further comprises:
stacking a capping layer and a metal-containing layer over the second work function layer; and
silicidating the metal-containing layer,
wherein the annealing includes annealing for the silicidating.
4. The method according to claim 1 , wherein the first work function layer comprises a titanium nitride layer that contains aluminum.
5. The method according to claim 1 , wherein the second work function layer is formed to be thinner than the first work function layer.
6. The method according to claim 1 , wherein the first work function layer and the second work function layer comprise titanium nitride, and wherein the first work function layer has a P type work function by the aluminum, and the second work function layer is formed thinner than the first work function layer to have an N type work function.
7. The method according to claim 1 , wherein the second work function layer comprises titanium nitride that has a stoichiometric composition ratio of approximately 1:1 between titanium and nitrogen.
8. The method according to claim 1 , wherein the threshold voltage modulation layer comprises lanthanum oxide.
9. The method according to claim 1 , wherein the gate dielectric layer is formed by stacking an interface layer and a high-k dielectric layer, and the first dipole-interface is formed on an interface of the interface layer and the high-k dielectric layer of the PMOS region and the second dipole-interface is formed on an interface of the interface layer and the high-k dielectric layer of the NMOS region.
10. A method for fabricating a semiconductor device, comprising:
forming a PMOS region and an NMOS region in a substrate;
forming a gate dielectric layer over the substrate;
forming a first titanium nitride layer that contains aluminum over the gate dielectric layer;
forming a polysilicon layer as a reaction preventing layer over the first titanium nitride layer;
selectively removing the polysilicon layer and the first titanium nitride layer from the NMOS region;
forming a threshold voltage modulation layer that contains lanthanum over, the remaining polysilicon layer of the PMOS region and the gate dielectric layer of the NMOS region;
forming a second titanium nitride layer over the threshold voltage modulation layer; and
annealing a resulting structure on the substrate, thereby diffusing the aluminum into the gate dielectric layer of the PMOS region and the lanthanum into the gate dielectric layer of the NMOS region, respectively,
wherein the remaining polysilicon layer is formed between the first titanium nitride layer and the threshold voltage modulation layer over the PMOS region.
11. The method according to claim 10 , wherein, before the annealing, the method further comprises:
etching the second titanium nitride layer, the threshold voltage modulation layer, the remaining polysilicon layer, the remaining first titanium nitride layer, and the gate dielectric layer over the PMOS region, thereby forming a first gate stack over the PMOS region;
etching the second titanium nitride layer, the threshold voltage modulation layer and the gate dielectric layer over the NMOS region, thereby forming a second gate stack over the NMOS region; and
implanting impurities into the substrate to form sources/drains,
wherein the annealing includes annealing for activating the sources/drains.
12. The method according to claim 10 , wherein, before the annealing, the method further comprises:
stacking a capping layer and a metal-containing layer over the second titanium nitride layer; and
silicidating the metal-containing layer,
wherein the annealing includes annealing for the silicidating.
13. The method according to claim 10 , wherein the second titanium nitride layer is formed to be thinner than the first titanium nitride layer.
14. The method according to claim 10 , wherein the first titanium nitride layer has a P type work function by the aluminum, and the second titanium nitride layer is formed thinner than the first titanium nitride to have an N type work function.
15. The method according to claim 10 , wherein the second titanium nitride layer comprises titanium nitride that has a stoichiometric composition ratio of approximately 1:1 between titanium and nitrogen.
16. The method according to claim 10 , wherein the threshold voltage modulation layer comprises lanthanum oxide.