Three dimensional radioisotope battery and methods of making the same
According to one embodiment, a product includes an array of three dimensional structures, where each of the three dimensional structure includes a semiconductor material; a cavity region between each of the three dimensional structures; and a first material in contact with at least one surface of each of the three dimensional structures, where the first material is configured to provide high energy particle and/or ray emissions.
1. A product, comprising:
an array of three dimensional structures, wherein each of the three dimensional structures comprises a semiconductor material;
a continuous cavity region defined by sidewalls of the three dimensional structures, the cavity region extending along an entire height of the three dimensional structures, the height being defined between top and bottom ends of the respective three dimensional structure;
a first material in direct contact with at least one surface of the semiconductor material of each of the three dimensional structures, wherein the first material fills at least 25% of a volume of the cavity region, wherein the first material includes a first radioisotope configured to provide high energy particle and/or ray emissions; and
a second material configured to provide high energy particle and/or ray emissions, wherein the second material includes a second radioisotope which forms a layer that is deposited on at least one portion of the first material;
wherein the second radioisotope is different from the first radioisotope;
wherein the first and second radioisotopes are in direct contact with each other.
2. The product of claim 1 , wherein the semiconductor material is selected from a group consisting of: silicon, silicon carbide, gallium arsenide, indium phosphide, icosahedral boride, and gallium nitride.
3. The product of claim 1 , wherein each of the three dimensional structures comprises an aspect ratio of less than about 100:1, wherein the first material is in a plane of deposition of the three dimensional structures.
4. The product of claim 1 , wherein the first material has a thickness in a range of about 50 to about 500 microns, wherein the second material forms a layer that is deposited directly on at least one portion of the first material.
5. The product of claim 1 , wherein the first material comprises a radioisotope selected from a group consisting of: 148 Gd, 238 Pu, 244 Cm, 243 Am, 241 Am, 106 Ru, and 232 U.
6. The product of claim 1 , wherein the first material comprises a tritiated metal.
7. The product of claim 1 , wherein the second material comprises a radioisotope selected from a group consisting of: 148 Gd, 238 Pu, 244 Cm, 243 Am, 241 Am, 106 Ru, and 232 U.
8. The product of claim 1 , further comprising one or more additional materials positioned above at least one portion of the second material, wherein each of the one or more additional materials are configured to provide high energy particle and/or ray emissions.
9. The product of claim 8 , wherein each of the one or more additional materials comprises a radioisotope that is independently selected from a group consisting of: 148 Gd, 238 Pu, 244 Cm, 243 Am, 241 Am, 63 Ni, 106 Ru, and 232 U.
10. A method, comprising:
forming an array of three dimensional structures, wherein each of the three dimensional structures comprises a semiconductor material; and
depositing a solid first material on at least one surface of the semiconductor material of each of the three dimensional structures,
wherein the first material fills at least 25% of a volume of a cavity region between each of the three dimensional structures,
wherein a plane of deposition of the semiconductor material of the three dimensional structures extends through the first material,
wherein the first material includes two layers,
wherein the first layer includes a first radioisotope configured to provide high energy particles and/or ray emissions,
wherein the second layer includes a second radioisotope configured to provide high energy particles and/or ray emissions,
wherein the second radioisotope is different from the first radioisotope,
wherein the first and second radioisotopes are in direct contact with each other.
11. The method of claim 10 , wherein the semiconductor material is selected from a group consisting of: single crystal silicon, amorphous silicon, silicon carbide, gallium arsenide, indium phosphide, gallium nitride and an icosahedral boride.
12. The method of claim 10 , wherein the first material comprises a radioisotope selected from a group consisting of: 148 Gd, 238 Pu, 244 Cm, 243 Am, 241 Am, 106 Ru, 233 U, 232 U, 210 Po, and a tritiated metal.
13. The method of claim 10 , wherein forming the array of three dimensional structures includes at least one process selected from the group consisting of: wet chemical etching, ion beam etching, and plasma etching, wherein the cavity region between each of the three dimensional structures of the array is a continuous cavity region defined by sidewalls of the three dimensional structures, the cavity region extending along an entire height of the three dimensional structures, the height being defined between top and bottom ends of the respective three dimensional structure.
14. The method of claim 10 , further comprising applying a second material above the first material, wherein the second material is configured to provide high energy particle and/or ray emissions therefrom to the same sides of the three dimensional structures as the first material, wherein the second material forms a layer that is deposited directly on at least one portion of the first material.
15. The method of claim 14 , further comprising applying one or more additional materials above at least one portion of the second material, wherein each of the one or more additional materials is configured to provide high energy particle and/or ray emissions therefrom to the same sides of the three dimensional structures as the second material.