Semiconductor laser device, photoelectric converter, and optical information processing unit
A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.
1. A semiconductor laser device comprising:
a mesa section including a mesa structure with an active layer and a first electrode at a top surface of the mesa structure;
an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and
a first wiring on the embedding section, the first wiring (i) having a length equal to or longer than a radius of the mesa section, (ii) overlaying the first connection aperture in its entirety, (iii) extending across opposite sides of the first connection aperture, and (iv) being electrically connected to the first electrode through the first connection aperture.
2. The semiconductor laser device according to claim 1 , wherein: the mesa section is columnar.
3. The semiconductor laser device according to claim 1 , wherein:
the embedding section has a first insulating layer and a second insulating layer,
the mesa section forms a pillar laminated body covered with the first insulating layer, and the second insulating layer covers the laminated body.
4. The semiconductor laser device according to claim 3 , wherein, of the First wiring, a region on the laminated body has a substantially point symmetry shape, with respect to a point at a center of the mesa section, and, of this region, a part extending from the first connection aperture to one side is an excess wiring section.
5. The semiconductor laser device according to claim 3 , further comprising:
a second electrode in the laminated body, and paired with the first electrode;
a second connection aperture in the embedding section, and reaching the second electrode; and
a second wiring on the embedding section, and electrically connected to the second electrode through the second connection aperture,
wherein,
of the second wiring, a region on the laminate body has a substantially point symmetry shape, with respect to a point at a center of the mesa section.
6. The semiconductor laser device according to claim 5 , wherein the second wiring overlays the second connection aperture.
7. The semiconductor laser device according to claim 1 , wherein:
the mesa section is above one surface of a transparent substrate, and
a lens corresponding to the active layer is on other surface of the transparent substrate.
8. The semiconductor laser device according to claim 7 , wherein:
a base is on the one surface of the transparent substrate, and
the mesa section is on the base.
9. The semiconductor laser device according to claim 1 , wherein:
the mesa section includes a first multilayer reflective film, the active layer, a second multilayer reflective film, and a first electrode in this order, and
the second multilayer reflective film has an oxidation confinement section.
10. The semiconductor laser device according to claim 1 , wherein a signal is input into the first wiring, only from one side of the first connection aperture in an extending direction of the first wiring.
11. A photoelectric converter including a semiconductor laser device, the semiconductor laser device comprising:
a mesa section including a mesa structure with an active layer and a first electrode at a top surface of the mesa structure;
an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and
a first wiring on the embedding section, the first wiring having a length equal to or longer than a radius of the mesa section, (ii) overlaying the first connection aperture in its entirety, (iii) extending across opposite sides of the first connection aperture, and (iv) being electrically connected to the first electrode through the first connection aperture.
12. An optical information processing unit including a semiconductor laser device and a photodetector of receiving light emitted from the semiconductor laser device, the semiconductor laser device comprising:
a mesa section including a mesa structure with an active layer and a first electrode at a top surface of the mesa structure;
an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and
a first wiring on the embedding section, the first wiring (i) having a length equal to or longer than a radius of the mesa section, (ii) overlaying the first connection aperture in its entirety, (iii) extending across opposite sides of the first connection aperture, and (iv) being electrically connected to the first electrode through the first connection aperture.