Semiconductor device and manufacturing method thereof
The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.
1. A method for manufacturing a semiconductor device comprising:
forming a first protective film, a conductive film, a second protective film, and a first mask in this order over a semiconductor film;
forming a pair of second protective films and a pair of conductive films by etching part of the second protective film and the conductive film by using the first mask;
removing the first mask, and then forming a pair of first protective films by etching part of the first protective film by using the pair of second protective films and the pair of conductive films as a second mask, so that side surfaces of the pair of conductive films are depressed in a cross section; and
forming an insulating film over the semiconductor film, the pair of conductive films, and the pair of second protective films,
wherein the side surfaces of the pair of conductive films are in contact with the insulating film, and
wherein the first protective film is in direct contact with the conductive film.
2. The method according to claim 1 , wherein each of the pair of conductive films comprises one of copper, aluminum, gold, silver, and molybdenum.
3. The method according to claim 1 , wherein each of the pair of first protective films comprises one of titanium, tantalum, molybdenum, an alloy of titanium, an alloy of tantalum, an alloy of molybdenum, titanium nitride, tantalum nitride, and molybdenum nitride.
4. The method according to claim 1 , wherein each of the pair of second protective films is one of a nitride insulating film, a light-transmitting conductive film, and an oxide semiconductor film.
5. The method according to claim 4 , wherein the nitride insulating film comprises one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.
6. The method according to claim 4 , wherein the light-transmitting conductive film comprises one of indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and indium tin oxide containing silicon oxide.
7. The method according to claim 4 , wherein the oxide semiconductor film comprises an oxide comprising at least one of indium, gallium, and zinc.
8. The method according to claim 1 , wherein the semiconductor film is a film comprising silicon.
9. The method according to claim 1 , wherein the semiconductor film is a film comprising at least one of In, Ga, and Zn.
10. The method according to claim 1 ,
wherein the semiconductor film comprises a first region not overlapped with the pair of first protective films, and a second region overlapped with the pair of first protective films,
wherein the first region has a smaller thickness than the second region, and
wherein the first region serves as a channel formation region.
11. A method for manufacturing a semiconductor device comprising:
forming a first protective film, a conductive film, and a second protective film over a semiconductor film;
forming a first mask over the second protective film;
forming a pair of second protective films and a pair of conductive films by etching part of each of the second protective film and the conductive film by using the first mask;
forming a pair of first protective films by etching part of the first protective film by using the pair of second protective films as a second mask after removing the first mask; and
forming an insulating film over the semiconductor film, the pair of conductive films, and the pair of second protective films,
wherein in a cross section, side surfaces of the pair of second protective films extend outward beyond side surfaces of the pair of conductive films,
wherein the side surfaces of the pair of conductive films are in contact with the insulating film, and
wherein the first protective film is in direct contact with the conductive film.
12. The method according to claim 11 , wherein the first mask is removed by exposing the first mask to oxygen plasma.
13. The method according to claim 11 , wherein each of the pair of conductive films comprises one of copper, aluminum, gold, silver, and molybdenum.
14. The method according to claim 11 , wherein each of the pair of first protective films comprises one of titanium, tantalum, molybdenum, an alloy of titanium, an alloy of tantalum, an alloy of molybdenum, titanium nitride, tantalum nitride, and molybdenum nitride.
15. The method according to claim 11 , wherein each of the pair of second protective films is one of a nitride insulating film, a light-transmitting conductive film, and an oxide semiconductor film.
16. The method according to claim 15 , wherein the nitride insulating film comprises one of silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide.
17. The method according to claim 15 , wherein the light-transmitting conductive film comprises one of indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and indium tin oxide containing silicon oxide.
18. The method according to claim 15 , wherein the oxide semiconductor film comprises an oxide comprising at least one of indium, gallium, and zinc.
19. The method according to claim 11 , wherein the semiconductor film is a film comprising silicon.
20. The method according to claim 11 , wherein the semiconductor film is a film comprising at least one of In, Ga, and Zn.
21. The method according to claim 11 ,
wherein the semiconductor film comprises a first region not overlapped with the pair of first protective films, and a second region overlapped with the pair of first protective films,
wherein the first region has a smaller thickness than the second region, and
wherein the first region serves as a channel formation region.
22. A method for manufacturing a semiconductor device comprising:
forming a first film over a semiconductor film;
forming a second film over the first film;
forming a third film over the second film;
forming a first mask over the third film;
etching the second film and the third film to form a pair of second films and a pair of third films by using the first mask; and
etching the first film to form a pair of first films by using the pair of second films and the pair of third films as a second mask after removing the first mask,
wherein the first film is in direct contact with the second film.
23. The method according to claim 22 , further comprising:
forming a fourth film comprising an insulator over the semiconductor film, the pair of second films, and the pair of third films,
wherein side surfaces of the pair of second films are in contact with the fourth film.
24. The method according to claim 22 , wherein the first film contains one of Ti, Ta, and Mo.
25. The method according to claim 22 , wherein the second film contains one of Cu, Al, Au, Ag, and Mo.
26. The method according to claim 22 , wherein the third film is one of a nitride insulating film, a light-transmitting conductive film, and an oxide semiconductor film.
27. The method according to claim 22 , wherein the semiconductor film contains at least one of In, Ga, and Zn.