IP Library Granted Patent US 9,190,384
Granted Patent B2
US 9,190,384 · App. 14/221,182 · Granted Nov 17, 2015

Preform including a groove extending to an edge of the preform

Inventors: Shixi Louis Liu (Milpitas, CA); Wenlong Ma (Fremont, CA); Frank Hin-Fai Chau (Fremont, CA); Barry Jia-Fu Lin (Cupertino, CA)
Assignee: TriQuint Semiconductor, Inc.
H01L24/81B23K35/0222H01L21/76898H01L24/29H01L24/32H01L24/83H01L29/0657H01L24/02H01L24/05H01L24/27H01L2224/0239H01L2224/02371H01L2224/04026H01L2224/05011H01L2224/05548H01L2224/05551H01L2224/05569H01L2224/05611H01L2224/05644H01L2224/05666H01L2224/05684H01L2224/2711H01L2224/27334H01L2224/27438H01L2224/291H01L2224/2912H01L2224/29022H01L2224/29023H01L2224/29025H01L2224/29109H01L2224/29111H01L2224/29144H01L2224/32058H01L2224/32059H01L2224/32225H01L2224/8309H01L2224/83192H01L2224/83193H01L2224/83365H01L2224/83815H01L2924/00014H01L2924/10155
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Quick Facts
Patent No.
US 9,190,384
App. No.
14/221,182
Granted
Nov 17, 2015
Kind
B2
Abstract

Embodiments include but are not limited to apparatuses and systems including a die or a preform including at least one groove configured to extend from at least one via of the die to an edge of the die. Other embodiments may be described and claimed.

Claims (18)

1. A preform comprising:

a first surface; and

a second surface, opposite the first surface, and including a groove to face a semiconductor die and extend from at least one via of the semiconductor die to an edge of the semiconductor die, wherein the perform is comprised of a solder material.

2. The preform of claim 1 , wherein the groove extends to an edge of the preform.

3. The preform of claim 1 , wherein the preform comprises a plurality of intersecting grooves including the groove.

4. The preform of claim 3 , wherein a first set of the plurality of grooves extends from a first edge of the preform to a second edge of the preform that is opposite the first edge and a second set of the plurality of intersecting grooves extends from a third edge of the preform to a fourth edge of the preform that is opposite the third edge.

5. The preform of claim 1 , wherein the groove is approximate 5-10 microns deep.

6. A method comprising:

providing a semiconductor die including at least one via;

placing a preform of solder material between the die and a substrate, wherein the preform includes a groove facing the semiconductor die, and wherein the groove extends from the at least one via to an edge of the semiconductor die; and

reflowing the preform to fill the groove with the solder material.

7. The method of claim 6 , wherein the reflowing couples the semiconductor die with the substrate.

8. The method of claim 6 , wherein the groove is a first groove and the preform further comprises a second groove that intersects the first groove,

wherein the placing comprises aligning the intersection of the first groove and the second groove with a first via of the at least one via.

9. The method of claim 6 , wherein the groove extends to an edge of the preform.

10. The method of claim 6 , wherein the preform comprises a plurality of intersecting grooves including the groove.

11. The method of claim 10 , wherein a first set of the plurality of grooves extends from a first edge of the preform to a second edge of the preform that is opposite the first edge and a second set of the plurality of intersecting grooves extends from a third edge of the preform to a fourth edge of the preform that is opposite the third edge.

12. The method of claim 6 , wherein the groove is approximately 5-10 micrometers deep.

Assignments (2)
MERGER Recorded Jun 16, 2016
From: TRIQUINT SEMICONDUCTOR, INC.
To: QORVO US, INC.
Reel/Frame 039050/0193 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2014
From: LIU, SHIXI LOUIS; MA, WENLONG; CHAU, FRANK HIN-FAI; LIN, BARRY JIA-FU
To: TRIQUINT SEMICONDUCTOR, INC.
Reel/Frame 032490/0963 →
Continuity (2)
Division 12847477 · Jul 30, 2010
Related Publication 20140206149A1 · Jul 24, 2014