Semiconductor device

1. A semiconductor device comprising:

a substrate made of a semiconductor material and including a main surface formed with a recess;

a wiring layer formed on the substrate; and

three direction sensor elements disposed in the recess and having respective detection reference axes along mutually different directions,

wherein the recess includes a first hollow and a second hollow, the first hollow accommodating the three direction sensor elements and including a first bottom surface and a first inclined side surface, the second hollow including a second bottom surface and a second inclined side surface, the second bottom surface connecting to the first inclined side surface, the second inclined side surface connecting to the second bottom surface and the main surface,

the substrate is made of a monocrystal silicon,

the main surface is a (100) surface,

the first inclined side surface includes two first inclined faces spaced apart from each other with the first bottom surface disposed between them, the first hollow including two first upright side surfaces perpendicular to the first bottom surface and spaced apart from each other with the first bottom surface disposed between them,

the second inclined side surface includes two second inclined faces spaced apart from each other with the second bottom surface disposed between them, the second hollow including two second upright side surfaces perpendicular to the second bottom surface and spaced apart from each other with the second bottom surface disposed between them,

the semiconductor device further comprising an acceleration sensor element for acceleration detection in three mutually different directions, and

the acceleration sensor element is accommodated in the first hollow.

2. The semiconductor device according to claim 1 , wherein at least one of the three direction sensor elements is supported by the first inclined side surface.

3. The semiconductor device according to claim 1 , wherein the acceleration sensor element is supported by the first bottom surface.

4. A semiconductor device, comprising:

a substrate made of a semiconductor material and including a main surface formed with a recess;

a wiring layer formed on the substrate; and

three direction sensor elements disposed in the recess and having respective detection reference axes along mutually different directions,

wherein the recess includes a first hollow and a second hollow, the first hollow accommodating the three direction sensor elements and including a first bottom surface and a first inclined side surface, the second hollow including a second bottom surface and a second inclined side surface, the second bottom surface connecting to the first inclined side surface, the second inclined side surface connecting to the second bottom surface and the main surface,

the substrate is made of a monocrystal silicon,

the main surface is a (100) surface,

the first inclined side surface includes two first inclined faces spaced apart from each other with the first bottom surface disposed between them, the first hollow including two first upright side surfaces perpendicular to the first bottom surface and spaced apart from each other with the first bottom surface disposed between them,

the second inclined side surface includes two second inclined faces spaced apart from each other with the second bottom surface disposed between them, the second hollow including two second upright side surfaces perpendicular to the second bottom surface and spaced apart from each other with the second bottom surface disposed between them,

the semiconductor device further comprising an integrated circuit element supported by the second bottom surface, wherein the integrated circuit element overlaps at least a part of the first hollow as viewed in a normal direction of the main surface.

5. The semiconductor device according to claim 4 , wherein the integrated circuit element is supported by at least two regions of the second bottom surface that flank the first hollow.

6. The semiconductor device according to claim 4 , wherein the wiring layer includes a plurality of external terminals formed on the main surface.

7. The semiconductor device according to claim 6 , wherein the wiring layer includes a plurality of second bottom surface pads formed on the second bottom surface for mounting the integrated circuit element.

8. The semiconductor device according to claim 7 , wherein the wiring layer includes a plurality of first bottom surface pads formed on the first bottom surface for mounting the acceleration sensor element.

9. The semiconductor device according to claim 8 , wherein the wiring layer includes a plurality of first inclined side surface pads formed on the first inclined side surface for mounting the direction sensor elements.

10. The semiconductor device according to claim 9 , wherein the wiring layer includes a connection path for connecting ones of the external terminals, the second bottom surface pads, the first bottom surface pads and the first inclined side surface pads.

11. The semiconductor device according to claim 10 , wherein the connection path extends via the second inclined side surface.

12. The semiconductor device according to claim 10 , wherein the connection path extends via the first inclined side surface.

13. The semiconductor device according to claim 6 , further comprising a sealing resin covering the three direction sensor elements.

14. The semiconductor device according to claim 13 , wherein the sealing resin includes a first sealing resin member and a second sealing resin member, the first sealing resin member covering at least one of the three direction sensor elements, the second sealing resin member covering at least a part of the integrated circuit element.

15. The semiconductor device according to claim 14 , wherein the second sealing resin member covers the entirety of the integrated circuit element.

16. The semiconductor device according to claim 15 , wherein the external terminals are exposed from the second sealing resin member.