Transistor device structure that includes polycrystalline semiconductor thin film that has large grain size
A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline semiconductor thin film is disposed on the substrate. A grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter. The first transistor unit is disposed on the first polycrystalline semiconductor thin film and includes a first gate dielectric layer and a first gate structure. The first gate dielectric layer is disposed on a surface of the first polycrystalline thin film semiconductor. The first gate structure is disposed on a surface of the first gate dielectric layer.
1. A transistor device structure, comprising:
a substrate;
a first polycrystalline semiconductor thin film disposed on the substrate, wherein a surface roughness of the first polycrystalline semiconductor thin film is smaller than 0.5 nm, a grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer, and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter; and
a first transistor unit disposed on the first polycrystalline semiconductor thin film and comprising:
a first gate dielectric layer disposed on a surface of the first polycrystalline semiconductor thin film; and
a first gate structure disposed on a surface of the first gate dielectric layer.
2. The transistor device structure according to claim 1 , wherein the substrate comprises:
a semiconductor substrate; and
an insulating material layer disposed on a surface of the semiconductor substrate, wherein the first polycrystalline semiconductor thin film is disposed on a surface of the insulating material layer.
3. The transistor device structure according to claim 1 , wherein the substrate comprises:
a semiconductor substrate;
a first insulating material layer disposed on a surface of the semiconductor substrate;
a metal back-gate structure disposed on a surface of the first insulating material layer; and
a second insulating material layer disposed on a surface of the metal back-gate structure, wherein the first polycrystalline semiconductor thin film is disposed on a surface of the second insulating material layer.
4. The transistor device structure according to claim 1 , further comprising:
a third insulating material layer;
a second polycrystalline semiconductor thin film; and
a second transistor unit,
wherein the third insulating material layer is disposed on the first transistor unit, the second polycrystalline semiconductor thin film is disposed on the third insulating material layer, the second transistor unit is arranged on a surface of the second polycrystalline semiconductor thin film, and the second transistor unit and the first transistor units have a same film layer structure.
5. The transistor device structure according to claim 4 , wherein a thickness of the third insulating material layer is less than 300 nanometers.
6. The transistor device structure according to claim 4 , wherein a grain diameter of the second polycrystalline semiconductor thin film is greater than 1 micrometer.
7. The transistor device structure according to claim 1 , wherein a sub-threshold swing of the first polycrystalline semiconductor thin film is less than 147 mV/decade.
8. The transistor device structure according to claim 1 , wherein a threshold voltage of the first polycrystalline semiconductor thin film is less than 0.92V.
9. The transistor device structure according to claim 1 , wherein a length of the first gate structure is less than 50 nm.
10. A transistor device structure, comprising:
a substrate;
a first polycrystalline semiconductor thin film disposed on the substrate, wherein a surface roughness of the first polycrystalline semiconductor thin film is smaller than 0.5 nm, a grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer, and a thickness of the first polycrystalline semiconductor thin film is less than 30 nanometers; and
a first transistor unit disposed on the first polycrystalline semiconductor thin film and comprising:
a first gate dielectric layer disposed on a surface of the first polycrystalline semiconductor thin film; and
a first gate structure disposed on a surface of the first gate dielectric layer.
11. The transistor device structure according to claim 10 , wherein the substrate comprises:
a semiconductor substrate; and
an insulating material layer disposed on a surface of the semiconductor substrate, wherein the first polycrystalline semiconductor thin film is disposed on a surface of the insulating material layer.
12. The transistor device structure according to claim 10 , wherein the substrate comprises:
a semiconductor substrate;
a first insulating material layer disposed on a surface of the semiconductor substrate;
a metal back-gate structure disposed on a surface of the first insulating material layer; and
a second insulating material layer disposed on a surface of the metal back-gate structure, wherein the first polycrystalline semiconductor thin film is disposed on a surface of the second insulating material layer.
13. The transistor device structure according to claim 10 , further comprising:
a third insulating material layer;
a second polycrystalline semiconductor thin film; and
a second transistor unit,
wherein the third insulating material layer is disposed on the first transistor unit, the second polycrystalline semiconductor thin film is disposed on the third insulating material layer, the second transistor unit is arranged on a surface of the second polycrystalline semiconductor thin film, and the second transistor unit and the first transistor units have a same film layer structure.
14. The transistor device structure according to claim 10 , wherein a sub-threshold swing of the first polycrystalline semiconductor thin film is less than 147 mV/decade.
15. The transistor device structure according to claim 10 , wherein a threshold voltage of the first polycrystalline semiconductor thin film is less than 0.92V.
16. The transistor device structure according to claim 10 , wherein a length of the first gate structure is less than 50 nm.