IP Library Granted Patent US 8,767,485
Granted Patent B1
US 8,767,485 · App. 14/225,432 · Granted Jul 1, 2014

Operation method of a supply voltage generation circuit used for a memory array

Inventors: Shi-Wen Chen (Hsinchu, TW); Hsin-Pang Lu (Hsinchu, TW); Chung-Cheng Tsai (Taichung, TW); Ya-Nan Mou (Hsinchu, TW)
Assignee: United Microelectronics Corp.
G11C7/00G11C5/147G11C8/08G11C11/4074G11C7/08G11C7/10G11C29/021
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Quick Facts
Patent No.
US 8,767,485
App. No.
14/225,432
Granted
Jul 1, 2014
Kind
B1
Abstract

A supply voltage generation circuit includes a comparison unit, a voltage level control unit and a voltage regulator circuit. Comparison unit is configured to compare input data and output data of a memory array to each other and thereby generating a comparison result, wherein output data are storage data stored in a plurality of memory units of memory array processed by a program operation according to input data, and the comparison result indicates the number of different bits existing between the output data and the input data. Voltage level control unit is configured to generate a control signal according to the comparison result. Voltage regulator circuit is configured to provide a supply voltage for the memory array and adjust the value of the supply voltage according to the control signal. A memory and an operation method of a supply generation circuit used for a memory array are also provided.

Claims (6)

1. An operation method of a supply voltage generation circuit used for a memory array, the memory array comprising a plurality of memory units and being electrically coupled to a decoder, the decoder comprising an input terminal and a plurality of output terminals, and each output terminal of the decoder being electrically coupled to a respective group of the memory units, the operation method comprising:

providing, according to input data of the memory array, a supply voltage to the input terminal of the decoder;

generating a comparison result by comparing the input data to output data of the memory array, wherein the output data are storage data stored in a plurality of memory units of the memory array processed by a program operation according to the input data, and the comparison result indicates the number of different bits existing between the output data and the input data; and

adjusting the value of the supply voltage according to the comparison result if the comparison result indicates that there is at least one different bit existing between the input data and the output data.

2. The operation method according to claim 1 , wherein the decoder comprises a source line decoder.

3. The operation method according to claim 1 , wherein the comparison of the input data and the output data is realized by a digital data comparison manner, analog-type current comparison manner or analog-type voltage comparison manner.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2021
From: UNITED MICROELECTRONICS CORPORATION
To: MARLIN SEMICONDUCTOR LIMITED
Reel/Frame 056991/0292 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2014
From: CHEN, SHI-WEN; LU, HSIN-PENG; TSAI, CHUNG-CHENG; MOU, YA-NAN
To: UNITED MICROELECTRONICS CORPORATION
Reel/Frame 032524/0188 →
Continuity (1)
Division 13652422 · Oct 15, 2012