Method of manufacturing semiconductor device
View Patent ↗To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.
1. A method of manufacturing a semiconductor device, comprising:
(a) performing:
(a-1) supplying a source gas to a substrate in a process chamber;
(a-2) exhausting an inside of the process chamber;
(a-3) supplying a reaction gas to the substrate; and
(a-4) exhausting the inside of the process chamber in order to form a first film on the substrate; and
b) alternately repeating a first cycle and a second cycle to form a second film on the first film, wherein the first cycle comprises alternately repeating: (b-1) supplying the source gas to the substrate; and (b-2) exhausting the inside of the process chamber, and the second cycle comprises alternately repeating: (b-3) supplying the reaction gas to the substrate; and (b-4) exhausting the inside of the process chamber.
2. The method of claim 1 , wherein each exhaust of the inside of (a-2), (a-4), (b-2) and (b-4) comprises at least one of a vacuum exhaust and a gas purge by an inert gas supply.
3. The method of claim 1 , wherein a duration of (b-2) increases as (b-2) is repeated in the first cycle, or a duration of (b-4) increases as (b-4) is repeated in the second cycle.
4. The method of claim 1 , wherein the source gas is continuously supplied in (b-2) at a flow rate lower than a flow rate of the source gas supplied in (b-1).
5. The method of claim 4 , wherein a flow rate of the source gas supplied in (b-2) increases as (b-2) is repeated in the first cycle.
6. The method of claim 1 , wherein the reaction gas is continuously supplied in (b-4) at a flow rate lower than a flow rate of the reaction gas supplied in (b-3).
7. The method of claim 6 , wherein a flow rate of the reaction gas supplied in (b-4) increases as (b-4) is repeated in the second cycle.
8. The method of claim 1 , wherein the substrate comprises a pattern thereon.