IP Library Granted Patent US 9,696,264
Granted Patent B2
US 9,696,264 · App. 14/226,745 · Granted Jul 4, 2017

Apparatus and methods for determining defect depths in vertical stack memory

Inventors: Steven R. Lange (Alamo, CA); Robert M. Danen (Pleasanton, CA); Stefano Palomba (San Jose, CA)
Assignee: KLA-Tencor Corporation
G01N21/9501G01N21/8806G01N2021/1785
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,696,264
App. No.
14/226,745
Granted
Jul 4, 2017
Kind
B2
Abstract

Disclosed are methods and apparatus for inspecting a vertical semiconductor stack of a plurality of layers is disclosed. The method includes (a) on a confocal tool, repeatedly focusing an illumination beam at a plurality of focus planes at a plurality of different depths of a first vertical stack, wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm, (b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images, and (c) determining which one of the different depths at which the defect is located in the first vertical stack based on the in-focus images.

Claims (35)

1. A method for inspecting a vertical stack structure, comprising:

(a) on a confocal tool, repeatedly focusing an illumination beam at a same particular xy location and a plurality of focus planes at a plurality of different depths of a first vertical stack structure having a plurality of patterned layers, wherein the different depths correspond to incremental z positions from a top surface of the first vertical stack structure, through the plurality of patterned layers of the first vertical stack structure, and to a bottom of the first vertical stack structure, and wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm;

(b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack structure at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images; and

(c) determining which one of the different depths at which the defect is located in the first vertical stack structure based on the in-focus images.

2. The method of claim 1 , wherein the out-of-focus light is inhibited from reaching the detector of the confocal tool by an output aperture module that is positioned and dimensioned so as to block the out-of-focus output light at the wavelength range between about 700 nm and about 950 nm from reaching the detector.

3. The method of claim 1 , wherein the defect was detected in the first vertical stack structure using another inspection tool that differs from the confocal tool, wherein such defect was detected without determining a depth of such defect with respect to the first vertical stack structure.

4. The method of claim 1 , further comprising detecting the defect based on the in-focus images prior to determining which one of the different depths at which the defect is located in the first vertical stack structure based on the in-focus images.

5. The method of claim 1 , wherein determining which one of the different depths at which the defect is located in the first vertical stack structure includes determining that a particular one of the in-focus images has a sharpest contrast and defining the particular in-focus image's corresponding depth as the depth of the defect.

6. The method of claim 1 , further comprising determining a classification of the defect or discriminating a material of the defect based on the in-focus images.

7. The method of claim 1 , further comprises:

on the confocal tool, repeatedly focusing one or more illumination beams at a second plurality of focus planes at a second plurality of different depths of each of a second plurality of vertical stack structures;

generating a second plurality of in-focus images for the second different depths based on in-focus output light detected from the second vertical stack structures at the second different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the second in-focus images; and

detecting one or more second defects in the second vertical stack structures; and

for each detected second defect, determining which one of the different depths at which the second defect is located based on the second in-focus images.

8. The method of claim 7 , wherein a plurality of illumination beams are simultaneously focused at the second focus planes of the second vertical stack structures.

9. The method of claim 1 , wherein the first vertical stack structure is a three-dimensional memory structure having a plurality of alternating patterned layers formed from an oxide material and either a nitride or polysilicon material.

10. A system for detecting defects or reviewing defects in a vertical semiconductor structure, the system comprising:

an illumination optics module for repeatedly focusing an illumination beam at a same particular xy location and a plurality of focus planes at a plurality of different depths of a first vertical stack structure having a plurality of patterned layers, wherein the different depths correspond to incremental z positions from a top surface of the first vertical stack structure, through the plurality of patterned layers of the first vertical stack structure, and to a bottom of the first vertical stack structure, and wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm;

a collection optics module for collecting in-focus output light from the plurality of different depths in response to the focused illumination beam that is focused at such different depths;

a detector for detecting the in-focus output light collected from the plurality of different depths, wherein the collection optics module is further arranged to inhibit out-of-focus output light from reaching the detector so as to inhibit such out-of-focus output light from contributing to generation of the in-focus images; and

a controller operable to perform the following operations:

generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack structure at the different depths; and

determining which one of the different depths at which the defect is located in the first vertical stack structure based on the in-focus images.

11. The system of claim 10 , wherein the illumination optics module includes an illumination aperture module and the collection optics module includes an output aperture module.

12. The system of claim 11 , wherein each of the illumination and output aperture modules is in the form of a fixed pinhole or slit array.

13. The system of claim 11 , wherein each of the illumination and output aperture modules is in the form of a rotating Nipkow disk for scanning the focused illumination beam across a focal plane area of the sample.

14. The system of claim 11 , wherein each of the illumination and output aperture modules is in the form of a programmable spatial modulator for scanning the focused illumination beam across a focal plane area of the sample.

15. The system of claim 11 , wherein the illumination aperture module is positioned and dimensioned so as to block the out-of-focus output light at the wavelength range between about 700 nm and about 950 nm from reaching the detector.

16. The system of claim 10 , wherein the illumination optics module includes one or more galvanic mirrors for scanning the focused illumination beam across a focal plane area of the sample.

17. The system of claim 10 , wherein the defect was detected in the first vertical stack structure using another inspection tool that differs from the confocal tool, wherein such defect was detected without determining a depth of such defect with respect to the first vertical stack structure.

18. The system of claim 10 , wherein the controller is further operable to detect the defect based on the in-focus images prior to determining which one of the different depths at which the defect is located in the first vertical stack structure based on the in-focus images.

19. The system of claim 10 , wherein determining which one of the different depths at which the defect is located in the first vertical stack structure includes determining that a particular one of the in-focus images has a sharpest contrast and defining the particular in-focus image's corresponding depth as the depth of the defect.

20. The system of claim 10 , wherein the controller is further operable to determine a classification of the defect or discriminate a material of the defect based on the in-focus images.

21. The system of claim 10 , wherein the system is in the form of a confocal review module for reviewing defects, wherein the system further comprises an inspector module for detecting defects using a non-confocal inspection mode.

22. The system of claim 10 , wherein the first vertical stack structure is a three-dimensional memory structure having a plurality of alternating patterned layers formed from an oxide material and either a nitride or polysilicon material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 5, 2014
From: LANGE, STEVEN R.; DANEN, ROBERT M.; PALOMBA, STEFANO
To: KLA-TENCOR CORPORATION
Reel/Frame 032820/0510 →
Continuity (2)
Provisional Application 61807753 · Apr 3, 2013
Related Publication 20140300890A1 · Oct 9, 2014