Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere of the B atom-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying an Si atom-containing gas into the processing chamber to form a non-doped Si film on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the Si atom-containing gas.
1. A method of manufacturing a semiconductor device, comprising:
a process of transferring a substrate into a processing chamber;
a first gas supplying process of supplying a boron-containing gas into the processing chamber to boron-terminate on the surface of the substrate;
a first purging process of purging an inside of the processing chamber under an atmosphere of the boron-containing gas supplied in the first gas supplying process;
a second gas supplying process of supplying a silicon-containing gas into the processing chamber to form a boron-inhibited Si film having a boron concentration of 3.0×10 20 atom/cm 3 or less on the substrate, after the first purging process; and
a second purging process of purging the inside of the processing chamber under an atmosphere of the silicon-containing gas.
2. The method according to claim 1 , wherein a supply flow rate of the boron-containing gas supplied into the processing chamber in the first gas supplying process is 5 to 30 sccm.
3. The method according to claim 2 , wherein a supply time of the boron-containing gas supplied into the processing chamber in the first gas supplying process is 10 to 300 seconds.
4. The method according to claim 2 , wherein the boron-containing gas is BCl3.
5. The method according to claim 1 , wherein the substrate is processed at a temperature lower than 400° C.
6. The method according to claim 5 , wherein a pressure in the processing chamber is maintained in a range of 30 to 300 Pa.
7. The method according to claim 1 , wherein a pressure in the processing chamber is maintained in a range of 30 to 300 Pa.
8. A method of processing a substrate, comprising:
a process of transferring a substrate into a processing chamber;
a first gas supplying process of supplying a boron-containing gas into the processing chamber to boron-terminate on the surface of the substrate;
a first purging process of purging an inside of the processing chamber under an atmosphere of the boron-containing gas supplied in the first gas supplying process;
a second gas supplying process of supplying a silicon-containing gas into the processing chamber to form a boron-inhibited Si film having a boron concentration of 3.0×10 20 atom/cm 3 or less on the substrate, after the first purging process; and
a second purging process of purging the inside of the processing chamber under an atmosphere of the silicon-containing gas.