Heat treatment apparatus heating substrate by irradiation with light
A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.
1. A heat treatment method of irradiating a substrate with light to heat the substrate, said heat treatment method comprising the step of:
repeatedly applying a plurality of pulses to a gate of an insulated-gate bipolar transistor connected to a flash lamp, thereby, emitting light from said flash lamo to perform light irradiation to the substrate, the surface temperature of said substrate reaches a maximum temperature, and thereafter, maintaining said surface temperature at said maximum temperature for a certain period of time.
2. A heat treatment apparatus for irradiating a substrate with light to heat the substrate, said heat treatment apparatus comprising:
a holder holding a substrate;
a flash lamp emitting light to the substrate held by said holder;
an insulated-gate bipolar transistor connected in series with said flash lamp, a capacitor, and a coil; and
a controller configured to repeatedly apply a plurality of pulses to a gate of said insulated-gate bipolar transistor, thereby emit light from said flash lamp and perform light irradiation to the substrate, and the surface temperature of said substrate reaches a maximum temperature, and thereafter, maintain said surface temperature at said maximum temperature for a certain period of time.