IP Library Granted Patent US 8,907,547
Granted Patent B2
US 8,907,547 · App. 14/228,452 · Granted Dec 9, 2014

Composite substrate

Inventors: Tomoyoshi Tai (Inazawa, JP); Yasunori Iwasaki (Kitanagoya, JP); Yuji Hori (Owariasahi, JP); Takahiro Yamadera (Nagoya, JP); Ryosuke Hattori (Ichinomiya, JP); Kengo Suzuki (Nagoya, JP)
Assignee: NGK Insulators, Ltd.
H01L41/0838H01L41/053
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Quick Facts
Patent No.
US 8,907,547
App. No.
14/228,452
Granted
Dec 9, 2014
Kind
B2
Abstract

A composite substrate according to the present invention includes a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer joining together the piezoelectric substrate and the support substrate. The amorphous layer contains 3 to 14 atomic percent of argon. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element (such as tantalum) of the piezoelectric substrate than the second and third layers. The third layer contains a larger amount of a constituent element (silicon) of the support substrate than the first and second layers. The second layer contains a larger amount of argon than the first and third layers.

Claims (7)

1. A composite substrate comprising a piezoelectric substrate that is a single-crystal substrate composed of lithium tantalate or lithium niobate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer joining together the piezoelectric substrate and the support substrate, wherein

the amorphous layer contains 3 to 14 atomic percent of Ar.

2. The composite substrate according to claim 1 , wherein the amorphous layer has a thickness of 4 to 12 nm.

3. The composite substrate according to claim 1 , wherein

the amorphous layer includes, in order from the piezoelectric substrate toward the support substrate, a first layer, a second layer, and a third layer, the first layer containing a larger amount of a constituent element of the piezoelectric substrate than the second and third layers, the third layer containing a larger amount of a constituent element of the support substrate than the first and second layers, the second layer containing a larger amount of Ar than the first and third layers.

4. The composite substrate according to claim 3 , wherein the third layer is thicker than the first and second layers.

5. The composite substrate according to claim 1 , wherein an Fe content is less than 0.1 atomic percent.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2014
From: TAI, TOMOYOSHI; IWASAKI, YASUNORI; HORI, YUJI; YAMADERA, TAKAHIRO; HATTORI, RYOSUKE; SUZUKI, KENGO
To: NGK INSULATORS, LTD.
Reel/Frame 032555/0154 →
Priority Claims (1)
JP 2012-250071 · Nov 14, 2012 · national
Continuity (2)
Continuation PCTJP2013080399 · Nov 11, 2013
Related Publication 20140210317A1 · Jul 31, 2014