Neutron imaging systems utilizing lithium-containing semiconductor crystals
View Patent ↗A neutron imaging system, including: a plurality of Li-III-VI 2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and electronics operable for detecting and a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons. Each of the crystals is formed by: melting the Group III element; adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and adding the Group VI element to the single phase Li-III compound and heating. Optionally, each of the crystals is also formed by doping with a Group IV element activator.
1. A neutron imaging system, comprising:
a plurality of Li-III-VI 2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and
electronics operable for detecting a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons;
wherein the Li comprises 6 Li and the neutrons comprise thermal neutrons or the Li comprises 7 Li and the neutrons comprise high energy neutrons.
2. The neutron imaging system of claim 1 , wherein the Group III element comprises one of Ga and In.
3. The neutron imaging system of claim 1 , wherein the Group VI element comprises one of S, Se, and Te.
4. The neutron imaging system of claim 1 , wherein each of the crystals is formed by:
melting the Group III element;
adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and
adding the Group VI element to the single phase Li-III compound and heating.
5. The neutron imaging system of claim 4 , wherein the Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C.
6. The neutron imaging system of claim 4 , wherein 1 mole of the Li is added to 1 mole of the Group III element.
7. The neutron imaging system of claim 4 , wherein the Group VI element and the single phase Li-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C.
8. The neutron imaging system of claim 4 , wherein 2 moles of the Group VI element are added to the single phase Li-III compound.
9. The neutron imaging system of claim 4 , further comprising doping with a Group IV element activator.
10. The neutron imaging system of claim 1 , wherein the array comprises a pixelated array.
11. A method for providing a neutron imaging system, comprising:
providing a plurality of Li-III-VI 2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and
providing electronics operable for detecting a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons;
wherein the Li comprises 6 Li and the neutrons comprise thermal neutrons or the Li comprises 7 Li and the neutrons comprise high energy neutrons.
12. The neutron imaging method of claim 11 , wherein the Group III element comprises one of Ga and In.
13. The neutron imaging method of claim 11 , wherein the Group VI element comprises one of S, Se, and Te.
14. The neutron imaging method of claim 11 , wherein each of the crystals is formed by:
melting the Group III element;
adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and
adding the Group VI element to the single phase Li-III compound and heating.
15. The neutron imaging method of claim 14 , wherein the Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C.
16. The neutron imaging method of claim 14 , wherein 1 mole of the Li is added to 1 mole of the Group III element.
17. The neutron imaging method of claim 14 , wherein the Group VI element and the single phase Li-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C.
18. The neutron imaging method of claim 14 , wherein 2 moles of the Group VI element are added to the single phase Li-III compound.
19. The neutron imaging method of claim 14 , further comprising doping with a Group IV element activator.
20. The neutron imaging method of claim 11 , wherein the array comprises a pixelated array.
21. A neutron detection and imaging method, comprising:
providing a plurality of Li-III-VI 2 semiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and
detecting and imaging neutrons using the array;
wherein the Li comprises 6 Li and the neutrons comprise thermal neutrons or the Li comprises 7 Li and the neutrons comprise high energy neutrons.
22. The neutron detection and imaging method of claim 21 , wherein detected neutrons are imaged using a computed tomography technique.