IP Library Granted Patent US 9,556,527
Granted Patent B2
US 9,556,527 · App. 14/232,322 · Granted Jan 31, 2017

Undivided electrolytic cell and use of the same

Inventors: Michael Müller (Holzkirchen, DE); Patrick Keller (Tyrlaching, DE); Markus Schiermeier (München, DE)
Assignee: UNITED INITIATORS GMBH & CO. KG
C25B1/285C25B9/06
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Quick Facts
Patent No.
US 9,556,527
App. No.
14/232,322
Granted
Jan 31, 2017
Kind
B2
Abstract

The invention relates to a method for producing an ammonium peroxydisulfate or alkali metal peroxydisulfate, to an undivided electrolytic cell which is composed of individual components, and to an electrolytic device composed of a plurality of said electrolytic cells.

Claims (25)

1. A process for the preparation of an ammonium or alkali metal peroxydisulphate, comprising:

anodic oxidation of an aqueous electrolyte comprising a salt chosen from ammonium sulphate, alkali metal sulphate and/or the corresponding hydrogen sulphate in a tubular electrolytic cell comprising at least one anode and one cathode wherein a diamond layer arranged on a conductive carrier and doped with a tri- or pentavalent element is used as the anode,

the tubular electrolytic cell comprises an undivided electrolyte chamber between the anode and the cathode, and

the aqueous electrolyte comprises no promoter for increasing the decomposition voltage of water to oxygen and has a total solids content of from about 0.5 to about 650 g/l.

2. The process of claim 1 , wherein the alkali metal sulphate and/or the corresponding hydrogen sulphate is selected from the group consisting of sodium sulphate, potassium sulphate, sodium hydrogen sulphate, potassium hydrogen sulphate and mixtures thereof.

3. The process of claim 1 , wherein the anode carrier material is selected from the group consisting of silicon, germanium, titanium, zirconium, niobium, tantalum, molybdenum, tungsten, carbides of these elements, aluminium and mixtures thereof.

4. The process of claim 1 , wherein a boron-doped and/or phosphorus-doped diamond layer is used.

5. The process of claim 4 , wherein the boron-doped and/or phosphorus-doped diamond layer is doped up to an extent of 10,000 ppm in the crystal structure.

6. The process of claim 1 , wherein the diamond layer has a film thickness of from about 0.5 μm to about 5.0 μm.

7. The process of claim 1 , wherein a boron-doped diamond layer on a niobium or titanium carrier is used as the anode.

8. The process of claim 1 , wherein the cathode is formed from lead, carbon, tin, platinum, nickel, alloys of these elements, zirconium and/or acid-resistant high-grade steels.

9. The process of claim 1 , wherein multiple electrolytic cells are combined.

10. The process of claim 9 , wherein the multiple electrolytic cells are combined in the form of a double tube package or two-dimensionally.

11. The process of claim 1 , wherein the electrolyte has an acidic or neutral pH.

12. The process of claim 1 , wherein the electrolyte is moved in circulation through the electrolytic cell during the process.

13. The process of claim 12 , further comprising a sluicing out of electrolyte solution from the electrolyte circulation.

14. The process of claim 12 , further comprising a procedure in which the peroxydisulphates produced are obtained by crystallisation and separating off of the crystals from the electrolyte solution to form an electrolyte mother liquor.

15. The process of claim 14 , further comprising a recirculation of the electrolyte mother liquor, to increase the content of acid, sulphate and/or hydrogen sulphate in the electrolytic cell.

16. The process of claim 4 , wherein the anodic oxidation is carried out at an anodic current density of from about 50 to about 1,500 mA/cm 2 .

17. The process of claim 1 , wherein the electrolyte comprises about 100 to about 500 g/ 1 of persulphate.

18. The process of claim 1 , wherein the electrolyte comprises about 0.1 to about 3.5 mol of sulphuric acid per 1 of electrolyte solution.

19. The process of claim 1 , wherein the diamond layer has a film thickness of from about 0.8 μm to about 2.0 μm.

20. The process of claim 1 , wherein the diamond layer has a film thickness of about 1.0 μm.

21. The process of claim 1 , wherein the anodic oxidation is carried out at an anodic current density of from about 250 to about 1,350 mA/cm 2 .

22. The process of claim 1 , wherein the anodic oxidation is carried out at an anodic current density of from about 400 to about 1200 mA/cm 2 .

Assignments (2)
CHANGE OF NAME Recorded Mar 17, 2017
From: UNITED INITIATORS GMBH & CO. KG
To: UNITED INITIATORS GMBH
Reel/Frame 042039/0154 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 31, 2014
From: MÜLLER, MICHAEL; KELLER, PATRICK; SCHIERMEIER, MARKUS
To: UNITED INITIATORS GMBH & CO. KG
Reel/Frame 032557/0457 →
Priority Claims (1)
EP 11173916 · Jul 14, 2011 · regional
Continuity (1)
Related Publication 20140131218A1 · May 15, 2014