IP Library Granted Patent US 9,412,971
Granted Patent B2
US 9,412,971 · App. 14/232,632 · Granted Aug 9, 2016

Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component

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Quick Facts
Patent No.
US 9,412,971
App. No.
14/232,632
Granted
Aug 9, 2016
Kind
B2
Abstract

An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.

Claims (49)

1. An encapsulation structure for an optoelectronic component, comprising:

a barrier thin-film layer for protecting an optoelectronic component against chemical impurities;

a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and

an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and comprising a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.

2. The encapsulation structure as claimed in claim 1 ,

wherein the curable material of the intermediate layer is formed as self-curing material, as thermally curing material, as UV-curing or as radiation-curing material.

3. The encapsulation structure as claimed in claim 1 ,

wherein the curable material of the intermediate layer is formed as flexible curable material and/or as transparent curable material and/or as UV-resistant curable material.

4. The encapsulation structure as claimed in claim 1 ,

wherein the curable material of the intermediate layer is a lacquer material.

5. The encapsulation structure as claimed in claim 1 ,

wherein the curable material of the intermediate layer includes one or more of the following materials: a plastic, an epoxide, an acrylate, an imide, a carbonate, an olefin, a styrene, a urethane, a derivative of at least one of the materials in the form of monomers, oligomers or polymers, a mixture comprising at least two of the materials, or a copolymer or a compound comprising at least one of the materials.

6. The encapsulation structure as claimed in claim 1 ,

wherein the hardness of the intermediate layer is more than 70.

7. The encapsulation structure as claimed in claim 1 ,

wherein the layer thickness of the intermediate layer is approximately 100 nm to approximately 100 μm.

8. The encapsulation structure as claimed in claim 1 ,

wherein the cover layer is laminated on the intermediate layer.

9. An encapsulation arrangement, comprising:

an optoelectronic component having at least one functional layer;

an encapsulation structure formed above the at least one functional layer, the encapsulation structure, comprising:

a barrier thin-film layer for protecting an optoelectronic component against chemical impurities;

a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and

an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and comprising a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.

10. The encapsulation arrangement as claimed in claim 9 ,

wherein the at least one functional layer is formed as an organic functional layer.

11. A method for encapsulating an optoelectronic component, the method comprising:

applying a barrier thin-film layer on or above an optoelectronic component for protecting the optoelectronic component against chemical impurities;

applying an intermediate layer on the barrier thin-film layer, wherein the intermediate layer comprises a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface;

curing the intermediate layer; and

applying a cover layer above the cured intermediate layer for protecting the barrier thin-film layer against mechanical damage,

wherein the curable material of the intermediate layer is designed such that after the intermediate layer has been cured, said intermediate layer has a hardness such that mechanical loads on the barrier thin-film layer that are caused as a result of particle impurities during the application of the cover layer are reduced by means of the intermediate layer.

12. The method as claimed in claim 11 ,

wherein the intermediate layer is cured by means of a thermal treatment, by means of UV radiation, by means of radiation or without external action.

13. The method as claimed in claim 11 ,

wherein the curable material of the intermediate layer comprises a lacquer material.

14. The method as claimed in claim 11 ,

wherein the curable material of the intermediate layer comprises one or more of the following materials: a plastic, an epoxide, an acrylate, an imide, a carbonate, an olefin, a styrene, a urethan, a derivative of at least one of the materials in the form of monomers, oligomers or polymers, a mixture comprising at least two of the materials, or a copolymer or a compound comprising at least one of the materials.

15. The method as claimed in claim 11 ,

wherein the intermediate layer is applied by means of a contactless application method.

16. The method as claimed in claim 15 ,

wherein the contactless application method comprises at least one of the following methods:

a spraying method;

a spin coating method;

a dip coating method;

a slot die coating method;

a doctor blading method.

17. The method as claimed in claim 11 ,

wherein applying the cover layer comprises laminating the cover layer onto the intermediate layer.

Assignments (3)
MERGER Recorded Feb 17, 2026
From: OSRAM OLED GMBH
To: AMS-OSRAM INTERNATIONAL GMBH
Reel/Frame 074881/0104 →
SPIN-OFF OF THE ORIGINAL ASSIGNEE Recorded Dec 11, 2014
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 034679/0212 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2014
From: REUSCH, THILO
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 031958/0047 →