Insulating film-coated metal foil
An insulating film-coated metal foil having on one or both surfaces thereof an organic-inorganic hybrid layer containing dimethylsiloxane and a metalloxane comprising a metal other than Si. Relative to the concentration [Si] 1/4t of the Si at a depth of ¼t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer, the concentration [Si] 3/4t of the Si at a depth of ¾t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer satisfies [Si] 1/4t <[Si] 3/4t , and ([Si] 3/4t −[Si] 1/4t )/[Si] 3/4t is 0.02-0.23. Provided is a metal foil that can be used in solar cell substrates, flexible circuit substrates, etc., that exhibits surface flatness, pliability, insulating properties and thermal resistance properties, and that has a layer having a surface which is not susceptible to scratching by processes in which substrates are handled, such as conveyance and transshipment.
1. An insulating film-coated metal foil comprising a metal foil and an organic-inorganic hybrid layer disposed on one surface or both surfaces of the metal foil,
wherein the organic-inorganic hybrid layer is a layer which has been obtained by blending a polydimethylsiloxane and a metal alkoxide containing one or more metals selected from: Mg, Ca, Y, Al, Sn, Ti, Zr, Nb, Ta and W,
the concentration [Si] 1/4t of Si at a depth of ¼t from the surface of the organic-inorganic hybrid layer along the thickness direction of the layer has the following relationship with the concentration [Si] 3/4t of Si at a depth of ¾t from the surface of the organic-inorganic hybrid layer along the thickness direction of the layer:
[Si] 1/4t ≦[Si] 3/4t
and the value of the relative ratio of the Si concentrations, R Si =([Si] 3/4t −[Si] 1/4t )/[Si] 3/4t , is from 0.02 to 0.23.
2. The insulating film-coated metal foil according to claim 1 , wherein ratio A 1/2t =[M] 1/2t /[Si] 1/2t between the concentration [Si] 1/2t of Si and the concentration [M] 1/2t of metal element M of a metaloxane comprising a metal element except for Si at a depth of ½t from the surface of the organic-inorganic hybrid layer along the thickness direction of the layer has the following relationship with the ratio: A 1/10t =[M] 1/10t /[Si] 1/10t between the concentration [Si] 1/10t of Si and the concentration [M] 1/10t of metal element M of the metaloxane at a depth of 1/10t from the surface of the organic-inorganic hybrid layer along the thickness direction of the layer:
1.0 ×A 1/2t <A 1/10t <2.0 ×A 1/2t .
3. A process for producing an insulating film-coated metal foil having an organic-inorganic hybrid layer, comprising:
coating a metal foil with a liquid which has been obtained by blending a polydimethylsiloxane and a metal alkoxide containing one or more metals selected from: Mg, Ca, Y, Al, Sn, Ti, Zr, Nb, Ta and W,
drying the coating at 70 to 210° C., and
subjecting the coating to temperature elevation at a temperature rise rate of 30 to 80° C./min and holding the temperature at 250 to 600° C. for 30 to 240 minutes,
wherein the concentration [Si] 1/4t of Si at a depth of ¼t from the surface of the organic-inorganic hybrid layer along the thickness direction of the layer has the following relationship with the concentration [Si] 3/4t of Si at a depth of ¾t from the surface of the organic-inorganic hybrid layer along the thickness direction of the layer:
[Si] 1/4t <[Si] 3/4t
and the value of the relative ratio of the Si concentrations, R Si =([Si] 3/4t −[Si] 1/4t )/[Si] 3/4t , is from 0.02 to 0.23.
4. The process for producing an insulating film-coated metal foil according to claim 3 , wherein the ratio A 1/2t =[M] 1/2t /[Si] 1/2t between the concentration [Si] 1/2t of Si and the concentration [M] 1/2t of metal element M of a metaloxane comprising a metal element other than Si at a depth of ½t from the surface of the organic-inorganic hybrid layer along the thickness direction of the layer has the following relationship with the ratio: A 1/10t =[M] 1/10t /[Si] 1/10t between the concentration [Si] 1/10t of Si and the concentration [M] 1/10t of metal element M of the metaloxane at a depth of 1/10t from the surface of the organic-inorganic hybrid layer along the thickness direction of the layer:
1.0 ×A 1/2t <A 1/10t <2.0 ×A 1/2t .