SPUTTERING SYSTEMS FOR LIQUID TARGET MATERIALS

1 . A sputtering system for depositing a film on a substrate, comprising:

a magnetron assembly comprising:

a rotatable magnetron adjacent to a horizontal magnetron; and

one or more shields forming a chamber between said rotatable magnetron and said horizontal magnetron,

wherein said horizontal magnetron is configured to contain a liquid target having a first material and provide a material flux having said first material directed towards said rotatable magnetron, and

wherein said rotatable magnetron is configured to rotate a solid target having a second material in relation to said horizontal magnetron and provide a material flux having said first and second materials directed towards a substrate in view of said rotatable magnetron.

2 . The sputtering system of claim 1 , wherein said first material has a first melting point and said second material has a second melting point, and wherein said first melting point is lower than said second melting point.

3 . The sputtering system of claim 1 , wherein said first material is gallium and said second material is indium.

4 . The sputtering system of claim 1 , wherein said rotatable magnetron is at least partly cylindrical in shape.

5 . The sputtering system of claim 1 , wherein said horizontal magnetron comprises a backing plate adjacent to a magnetron body, and wherein said magnetron body includes one or more magnets and said backing plate is adapted to hold said liquid target.

6 . The sputtering system of claim 1 , wherein said rotatable magnetron comprises a support member adapted to rotate said solid target in relation to said horizontal magnetron.

7 . The sputtering system of claim 1 , wherein said horizontal magnetron is adapted to contain another liquid having a third material.

8 . The sputtering system of claim 1 , wherein said horizontal magnetron is configured to provide a flux of said first material in said chamber.

9 . The sputtering system of claim 1 , further comprising another horizontal magnetron adjacent to said horizontal magnetron, wherein said another horizontal magnetron is configured to provide a flux of a third material in said chamber.

10 . The sputtering system of claim 1 , further comprising another magnetron assembly adjacent to said magnetron assembly, wherein said another magnetron assembly is configured to provide a flux of a third material towards said substrate.

11 . The sputtering system of claim 10 , wherein said magnetron assemblies are enclosed in another chamber having an opening adapted to expose said substrate.

12 . The sputtering system of claim 10 , further comprising a source of a fourth material adjacent to said magnetron assembly or said another magnetron assembly.

13 . The sputtering system of claim 12 , wherein said fourth material is sulfur or selenium.

14 . (canceled)

15 . The sputtering system of claim 1 , further comprising a source of a third material adjacent to said magnetron assembly.

16 . (canceled)

17 . A sputtering system for depositing a film on a substrate, comprising:

(a) a horizontal magnetron adapted to contain a liquid target having a first material and provide a material flux having said first material;

(b) a rotatable magnetron in proximity to said horizontal planar magnetron, said rotatable magnetron adapted to contain a solid target having a second material and provide a material flux having said first and second materials directed towards a substrate in view of said rotatable magnetron; and

(c) one or more shields forming a chamber between said horizontal magnetron and said rotatable magnetron.

18 - 25 . (canceled)

26 . A method for sputtering an alloy film on a substrate, comprising:

(a) generating, with the aid of a sputtering system, a material flux comprising a first material and a second material, wherein said sputtering system comprises a magnetron assembly comprising:

(i) a rotatable magnetron adjacent to a horizontal magnetron; and

(ii) one or more shields forming a chamber between said rotatable magnetron and said horizontal magnetron,

wherein said horizontal magnetron contains a liquid target having said first material and provides a flux of said first material towards said rotatable magnetron, and

wherein said rotatable magnetron rotates a solid target having said second material in relation to said horizontal magnetron and provides a flux of said first and second materials towards said substrate in view of said rotatable magnetron; and

(b) exposing said substrate to said material flux.

27 - 34 . (canceled)

35 . The method of claim 26 , wherein said material flux comprises a third material generated by another magnetron assembly adjacent to said magnetron assembly.

36 . The method of claim 35 , wherein said magnetron assemblies are enclosed in another chamber having an opening that exposes said substrate.

37 . The method of claim 36 , wherein said material flux comprises a fourth material that is provided by a source adjacent to said magnetron assembly or said another magnetron assembly.

38 - 41 . (canceled)

42 . The method of claim 26 , wherein said substrate is exposed to said material flux while said substrate is moved in relation to said sputtering system, or vice versa.