Ion beam device having gas introduction port disposed on structure maintained at ground potential
View Patent ↗To avoid a glow discharge during the use of a conventional gas ionization chamber, there is no alternative but to increase a gas pressure. Therefore, while a conventional gas ionization chamber is used, an ion current cannot be increased by raising a gas introduction pressure. An object of the present invention is to increase the ion current by raising the gas pressure and prevent an ion beam from being scattered by an ionization gas. The gas is supplied from a structure maintained at a ground potential to prevent the application of a high voltage to the vicinity of an ionization gas introduction port at which the gas pressure is relatively high. Further, the ionization gas existing in a region through which the ion beam passes is preferentially reduced by performing differential evacuation from a lens opening in a lens electrode that forms an acceleration/focusing lens.
1. An ion beam device that irradiates a sample with an ion beam generated from a gas field ion source,
wherein the gas field ion source includes:
an emitter tip that receives a supply of a voltage from an acceleration power supply and acts as an anode;
an extraction electrode that receives a supply of a voltage from an extraction power supply and acts as a cathode;
a gas introduction section that supplies a gas from a gas introduction port to a space between an apex of the emitter tip and the extraction electrode; and
a vacuum vessel that houses the emitter tip and the extraction electrode and has an evacuation port for evacuating the gas,
wherein the gas introduction port is disposed on a radiation shield portion of a structure which is inside the vacuum vessel and maintained at a ground potential.
2. The ion beam device according to claim 1 ,
wherein the structure integrally includes a lens electrode that accelerates or focuses the ion beam.
3. The ion beam device according to claim 1 ,
wherein the structure is disposed to surround the emitter tip.
4. The ion beam device according to claim 1 ,
wherein the extraction electrode is disposed opposite the emitter tip, and
wherein the extraction electrode and the radiation shield portion of the structure are disposed to surround the emitter tip.
5. The ion beam according to claim 2 ,
wherein the structure is disposed to surround the emitter tip and provided with an opening through which the ion beam passes, and
wherein the gas is differentially evacuated through the opening.
6. The ion beam device according to claim 1 ,
wherein the gas introduction port of the gas introduction section is disposed on a side toward the emitter tip and away from a plane that contains the apex of the emitter tip and is perpendicular to an optical axis of the ion beam.
7. The ion beam device according to claim 1 ,
wherein the gas introduction port of the gas introduction section is disposed on a side toward the emitter tip and away from a plane that contains an emitter tip side surface of the extraction electrode.
8. An ion beam device that irradiates a sample with an ion beam generated from a gas field ion source,
wherein the gas field ion source includes:
an emitter tip that receives a supply of a voltage from an acceleration power supply and acts as an anode;
an extraction electrode that receives a supply of a voltage from an extraction power supply and acts as a cathode;
a gas introduction section that supplies a gas from a gas introduction port to a space between an apex of the emitter tip and the extraction electrode; and
a vacuum vessel that houses the emitter tip and the extraction electrode and has an evacuation port for evacuating the gas,
wherein a gas supply piping supplying the gas introduction port is received in an opening extending through a wall of a structure which is disposed inside the vacuum vessel and maintained at a ground potential.
9. The ion beam device according to claim 8 ,
wherein the structure includes a lens electrode that accelerates or focuses the ion beam
10. The ion beam device according to claim 8 ,
wherein the structure surrounds the emitter tip.
11. The ion beam device according to claim 8 ,
wherein the wall is disposed between a side of the vacuum vessel and the emitter tip.
12. The ion beam device according to claim 8 ,
wherein the wall is disposed between a top of the vacuum vessel and the emitter tip.
13. The ion beam device according to claim 8 ,
wherein the structure and a lens electrode that accelerates or focuses the ion beam are one body.
14. The ion beam device according to claim 1 ,
wherein the structure and a lens electrode that accelerates or focuses the ion beam are one body.