MEMS variable capacitor with enhanced RF performance
In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.
1. A MEMS variable capacitor, comprising:
a substrate having one or more control electrodes and one or more RF electrodes disposed therein;
a top electrode; and
a membrane movable between the substrate and the top electrode, wherein one or more of the substrate and the membrane have bumps formed thereover to control the spacing between the membrane and either the top electrode or both the one or more control electrodes and one or more RF electrodes;
wherein the top electrode has one or more dielectric plugs disposed therein at locations corresponding to the bumps formed over the membrane such that when the membrane moves to contact the top electrode, the bumps will contact the dielectric plugs.
2. The MEMS variable capacitor of claim 1 , wherein the bumps are additionally formed over the substrate.
3. The MEMS variable capacitor of claim 2 , wherein at least one bump of the bumps is formed directly over the one or more RF electrodes.
4. The MEMS variable capacitor of claim 3 , wherein the one or more RF electrodes com rises one or more slotted RF electrodes, wherein the one or more control electrodes comprises one or more slotted control electrodes: and wherein a bump of the bumps disposed over the one or more slotted RF electrodes extends above the substrate for a distance that is substantially equal to a distance that bumps disposed over the one or more slotted control electrodes extend.
5. A method of fabricating a MEMS variable capacitor, comprising:
polishing a first dielectric layer that is formed over a substrate so as to expose one or more control electrodes and one or more RF electrodes embedded within the substrate, the polishing resulting in bumps formed at upper surface edges of the one or more control electrodes and the one or more RF electrodes;
depositing a second dielectric layer over the one or more control electrodes and the one or more RF electrodes, wherein the second dielectric layer is conformal over the one or more control electrodes and the one or more RF electrodes such that the bumps are present;
depositing a sacrificial layer over the second dielectric layer;
forming a membrane over the sacrificial layer; and
removing the sacrificial layer such that the membrane is movable from a position spaced from the second dielectric layer and a position in contact with the second dielectric layer.
6. The method of claim 5 , wherein the one or more control electrodes comprises two control electrodes.
7. The method of claim 6 , wherein the one or more control electrodes are slotted control electrodes.
8. The method of claim 7 , wherein the one or more RF electrodes are slotted RF electrodes.
9. The method of claim 5 , a bump of the bumps disposed over the one or more RF electrodes extends above the substrate for a distance that is substantially equal to a distance that bumps disposed over the one or more control electrodes extend.
10. A method of fabricating a MEMS variable capacitor, comprising:
polishing a first dielectric layer that is formed over a substrate so as to expose one or more control electrodes and one or more RF electrodes embedded within the substrate, the polishing resulting in bumps formed at upper surface edges of the one or more control electrodes and the one or more RF electrodes;
depositing a second dielectric layer;
depositing a sacrificial layer over the second dielectric layer;
forming a membrane over the sacrificial layer; and
removing the sacrificial layer such that the membrane is movable from a position spaced from the second dielectric layer and a position in contact with the second dielectric layer;
following the polishing, etching the first dielectric layer and the bumps such that the one or more control electrodes and the one or more RF electrodes extend above the first dielectric layer.
11. The method of claim 10 , wherein the one or more control electrodes comprises two control electrodes.
12. The method of claim 11 , wherein the one or more control electrodes are slotted control electrodes.
13. The method of claim 12 , wherein the one or more RF electrodes are slotted RF electrodes.