IP Library Granted Patent US 9,218,988
Granted Patent B2
US 9,218,988 · App. 14/242,279 · Granted Dec 22, 2015

Microelectronic packages and methods therefor

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Quick Facts
Patent No.
US 9,218,988
App. No.
14/242,279
Granted
Dec 22, 2015
Kind
B2
Abstract

A method of making a microelectronic assembly can include molding a dielectric material around at least two conductive elements which project above a height of a substrate having a microelectronic element mounted thereon, so that remote surfaces of the conductive elements remain accessible and exposed within openings extending from an exterior surface of the molded dielectric material. The remote surfaces can be disposed at heights from said surface of said substrate which are lower or higher than a height of the exterior surface of the molded dielectric material from the substrate surface. The conductive elements can be arranged to simultaneously carry first and second different electric potentials: e.g., power, ground or signal potentials.

Claims (21)

1. A method of making a microelectronic assembly comprising:

providing a microelectronic package including a substrate, a microelectronic element overlying said substrate and at least two conductive elements projecting from a surface of said substrate, first and second conductive elements of said at least two conductive elements having surfaces remote from said surface of said substrate and being electrically connected through said substrate to said microelectronic element for carrying a first signal electric potential on said first conductive element and for simultaneously carrying a second electric potential on said second conductive element, said second electric potential being different from said first signal electric potential;

molding a dielectric material around said at least two conductive elements for supporting said microelectronic package, the molding performed by introducing the dielectric material into an interior cavity of a mold in which said conductive elements are disposed, the mold having depressions provided in a interior surface thereof, the depressions aligned with the at least two conductive elements so that the at least two conductive elements extend into the depressions when the dielectric material is introduced therein, and so that as a result of said molding said remote surfaces of said at least two conductive elements remain accessible and exposed at an exterior surface of said molded dielectric material and said remote surfaces are at least substantially planar and project to heights from said surface of said substrate greater than a height of the exterior surface of the molded dielectric material from said surface of said substrate.

2. The method as claimed in claim 1 , wherein said molded dielectric material surrounds at least portions of individual ones of said at least two conductive elements.

3. The method as claimed in claim 1 , wherein said at least two conductive elements project from a first surface of said substrate and said substrate further comprises a second surface remote from said first surface and at least a third conductive element and a fourth conductive element projecting from said second surface of said substrate, said at least third and fourth conductive elements having surfaces remote from said second surface of said substrate and being electrically connected through said substrate to said microelectronic element for carrying a third signal electric potential on said third conductive element and for simultaneously carrying a fourth electric potential on said fourth conductive element, said fourth electric potential being different from said third signal electric potential.

4. The method as claimed in claim 3 , further comprising compressing said at least third and fourth conductive elements so that said remote surfaces of said at least two second conductive elements lie in a common plane.

5. The method as claimed in claim 3 , wherein said substrate is flexible.

6. The method as claimed in claim 3 , wherein said substrate comprises a polymeric material.

7. The method as claimed in claim 3 , wherein said microelectronic element is a semiconductor chip having a front face and contacts at said front face, and a back face remote therefrom, said front face facing said substrate.

8. The method as claimed in claim 3 , wherein said microelectronic element is a semiconductor chip having a front face and contacts at said front face, and a back face remote therefrom, said back face facing said substrate.

9. The method as claimed in claim 3 , further comprising a compliant layer disposed between said microelectronic element and said substrate.

10. The method as claimed in claim 3 , wherein at least some of said conductive elements and said microelectronic element overlie a first surface of said substrate.

11. The method as claimed in claim 3 , wherein said microelectronic element overlies a first surface of said substrate and at least some of said conductive elements overlie a second surface of said substrate remote opposite said first surface.

12. The method as claimed in claim 3 , wherein said substrate includes a plurality of dielectric layers and conductive traces extending along said dielectric layers.

13. The method as claimed in claim 3 , wherein said microelectronic package is a first microelectronic package, further comprising making a second microelectronic package using the method of claim 3 , and stacking said second microelectronic package atop said first microelectronic package, wherein said first and second microelectronic packages are electrically interconnected together through said at least two conductive elements of each of said first and second microelectronic packages.

14. A method of making a microelectronic assembly comprising:

providing a structure including a substrate having first and second oppositely facing surfaces, a microelectronic element overlying the first surface of said substrate, a plurality of first conductive elements extending above the first surface and having remote surfaces above the first surface, said first conductive elements being electrically connected with said microelectronic element through electrically conductive traces on said substrate, said structure further including a plurality of second conductive elements accessible at the second surface of said substrate for connection with a component external to said structure, said second conductive elements electrically interconnected with said first conductive elements and with said microelectronic element;

molding a dielectric material covering portions of said first conductive elements and overlying at least a portion of said first surface, the molding performed by introducing the dielectric material into an interior cavity of a mold in which said first conductive elements are disposed, wherein during the introducing of the dielectric material said remote surfaces of said first conductive elements are protected from contact with the dielectric material, such that as a result of said molding said remote surfaces of said first conductive elements project above an exterior surface of said molded dielectric material.

15. The method of claim 14 , wherein the molding is performed such that said remote surfaces are planarized.

16. The method as claimed in claim 15 , wherein said molding comprises compressing at least some of said first conductive elements so that remote surfaces of said at least some first conductive elements lie in a common plane.

17. The method as claimed in claim 14 , wherein said substrate includes at least one dielectric layer and conductive traces extending along and supported by said at least one dielectric layer, wherein said molded dielectric material extends from a surface of a dielectric layer of said at least one dielectric layer.

Assignments (6)
CHANGE OF NAME Recorded Nov 21, 2025
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 073657/0979 →
CHANGE OF NAME Recorded Nov 21, 2025
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 073658/0661 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2014
From: HABA, BELGACEM; KANG, TECK-GYU; MOHAMMED, ILYAS; CHAU, ELLIS
To: TESSERA, INC.
Reel/Frame 032594/0725 →