Germanane analogs and optoelectronic devices using the same
The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.
1. A two-dimensional layer comprising M-R, wherein M is selected from the group consisting of Ge, and Sn; wherein R is C 1-18 alkyl; and wherein the M-R is crystalline.
2. The two-dimensional layer of claim 1 , wherein M is Ge.
3. The two-dimensional layer of claim 1 , wherein R is CH 3 .
4. The two-dimensional layer of claim 1 , wherein the layer is stable up to about 300° C.
5. The two-dimensional layer of claim 1 , wherein the layer has a band gap of from about 0.1 eV to about 3.4 eV.
6. A stack comprising the two-dimensional layer of claim 1 .
7. The stack of claim 6 , wherein M is Ge.
8. The stack of claim 6 , wherein R is CH 3 .
9. A two-dimensional layer of claim 1 , wherein M-R is Ge(CH 3 ).
10. A stack comprising the two-dimensional layer of claim 9 .
11. The two-dimensional layer of claim 1 , wherein R is a branched or unbranched hydrocarbon.
12. A light-emitting device comprising the two-dimensional layer of claim 1 .
13. The light-emitting device of claim 12 , wherein the light-emitting device is selected from the group consisting of light-emitting diodes and lasers.
14. The light-emitting device of claim 12 , wherein the two dimensional layer comprises GeCH 3 .
15. A light-absorbing device comprising the two dimensional layer of claim 1 .
16. The light-absorbing device of claim 15 , wherein the light-absorbing device is selected from the group consisting of photovoltaics and photodetectors.
17. The light-absorbing device of claim 15 , wherein the two dimensional layer comprises GeCH 3 .
18. A transistor comprising the two-dimensional layer of claim 1 .
19. The transistor of claim 18 , wherein the two dimensional layer comprises GeCH 3 .