Passivation of nonlinear optical crystals
The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.
1. A system comprising:
an exposure chamber containing a fluorine-doped borate-based nonlinear optical crystal comprising at least one of cesium borate (CBO) or cesium lithium borate (CLBO), wherein the fluorine-doped borate-based nonlinear optical crystal is grown from a melt containing an atomic percent of fluorine of 5-20% of the atomic percentage of boron in the melt to inhibit incorporation of OH into the fluorine-doped borate-based nonlinear optical crystal,
wherein the exposure chamber contains a passivating gas comprising at least one of deuterium mixed with one or more inert gases or a deuterium-containing compound mixed with one or more inert gases, wherein the at least one of deuterium or the deuterium-containing compound of the passivating gas has a selected concentration in a range of 5 to 10%,
wherein the exposure chamber includes an annealing stage configured to secure the nonlinear optical crystal within the exposure chamber, the stage including one or more thermal control elements configured to heat the fluorine-doped borate-based nonlinear optical crystal drive OH content out of the fluorine-doped borate-based nonlinear optical crystal.
2. The system of claim 1 , wherein the melt comprises a mixture of Cs 2 CO 3 , Li 2 CO 3 , B 2 O 3 and LiF.
3. The system of claim 2 , wherein the melt comprises a mixture of Cs 2 CO 3 , Li 2 CO 3 , B 2 O 3 and LiF in an approximate ratio of 1:0.749:5.5:0.502.
4. The system of claim 1 , further comprising: a crystal grower, wherein the crystal grower includes a stirrer unit for stirring the liquid containing a fluoride ion source to form the borate-based nonlinear optical crystal.
5. The system of claim 1 , further comprising: a mechanical preparation stage, wherein the mechanical preparation stage includes at least one of a crystal cutting unit or a crystal polisher.
6. The system of claim 1 , wherein the one or more thermal control elements of the annealing stage heat the nonlinear optical crystal to a temperature in a range of 300 to 350° C.
7. The system of claim 1 , further comprising:
a flow controller fluidically connected between a passivating gas source and the exposure chamber.
8. The system of claim 1 , further comprising:
a computer controller communicatively coupled to the flow controller and configured to transmit control instructions to the flow controller.
9. The system of claim 1 , wherein the fluorine-doped borate-based nonlinear optical crystal is formed for inclusion in a laser.
10. The system of claim 9 , wherein the fluorine-doped borate-based nonlinear optical crystal is formed for inclusion in a laser of at least one an inspection system or metrology system.
11. A system comprising:
a crystal grower for growing a fluorine-doped borate-based nonlinear optical crystal, the crystal grower containing a melt containing at least one of lithium fluoride or cesium fluoride, wherein an atomic percent of fluorine in the melt is 5-20% of the atomic percentage of boron in the melt to inhibit incorporation of OH into the fluorine-doped borate-based nonlinear optical crystal, wherein the fluorine-doped borate-based nonlinear optical crystal comprises at least one of cesium borate (CBO) or cesium lithium borate (CLBO);
an exposure chamber for containing the fluorine-doped borate-based nonlinear optical crystal comprising at least one of cesium borate (CBO) or cesium lithium borate (CLBO),
wherein the exposure chamber contains a passivating gas comprising at least one of deuterium mixed with one or more inert gases or a deuterium-containing compound mixed with one or more inert gases, wherein the at least one of deuterium or the deuterium-containing compound of the passivating gas has a selected concentration in a range of 5 to 10%,
wherein the exposure chamber includes an annealing stage configured to secure the nonlinear optical crystal within the exposure chamber, the stage including one or more thermal control elements configured to heat the fluorine-doped borate-based nonlinear optical crystal drive OH content out of the fluorine-doped borate-based nonlinear optical crystal.
12. The system of claim 11 , wherein the melt comprises a mixture of Cs 2 CO 3 , Li 2 CO 3 , B 2 O 3 and LiF.
13. The system of claim 12 , wherein the melt comprises a mixture of Cs 2 CO 3 , Li 2 CO 3 , B 2 O 3 and LiF in an approximate ratio of 1:0.749:5.5:0.502.
14. The system of claim 11 , wherein the crystal grower includes a stirrer unit for stirring the liquid containing a fluoride ion source to form the borate-based nonlinear optical crystal.
15. The system of claim 11 , further comprising: a mechanical preparation stage, wherein the mechanical preparation stage includes at least one of a crystal cutting unit or a crystal polisher.
16. The system of claim 11 , wherein the one or more thermal control elements of the annealing stage heat the nonlinear optical crystal to a temperature in a range of 300 to 350° C.
17. The system of claim 11 , further comprising:
a flow controller fluidically connected between a passivating gas source and the exposure chamber.
18. The system of claim 11 , further comprising:
a computer controller communicatively coupled to the flow controller and configured to transmit control instructions to the flow controller.
19. The system of claim 11 , wherein the fluorine-doped borate-based nonlinear optical crystal is formed for inclusion in a laser.
20. The system of claim 19 , wherein the fluorine-doped borate-based nonlinear optical crystal is formed for inclusion in a laser of at least one of an inspection system or metrology system.