Light emitting device having vertical structure and package thereof
A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.
1. A light emitting device package comprising:
a sub-mount having a first surface and a second surface;
a first metal layer on the first surface of the sub-mount;
a second metal layer on the second surface of the sub-mount;
a light emitting device on the first surface, the light emitting device comprising a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, wherein the first electrode is electrically connected to the first metal layer and the second electrode is electrically connected to the second metal layer, wherein the semiconductor light emitting structure comprises a light extraction structure,
a zener diode on the second surface such that the zener diode is electrically connected to the first metal layer and the second metal layer wherein the zener diode is a distance apart from the light emitting device, and
a lens on the sub-mount, wherein the lens is on the light emitting device,
wherein at least one of the first metal layer and the second metal layer directly contacts the sub-mount,
wherein the sub-mount has a cavity, the cavity having a bottom portion and an inclined portion, and
wherein the first metal layer has an inclined surface, and the inclined surface of the first metal layer is on the inclined portion of the cavity.
2. The light emitting device package of claim 1 , wherein the semiconductor light emitting structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer.
3. The light emitting device package of claim 1 , wherein a horizontal cross-sectional area adjacent to an upper surface of the semiconductor light emitting structure is different from a horizontal cross-sectional area adjacent to a lower surface of the semiconductor light emitting structure.
4. The light emitting device package of claim 1 , wherein the first electrode is disposed between the first conductive type semiconductor layer and the supporting layer, and the second electrode is disposed over the second conductive type semiconductor layer.
5. The light emitting device package according to claim 1 , wherein a height of the first surface is different than a height of the second surface.
6. The light emitting device package according to claim 5 , wherein the height of the first surface is less than the height of the second surface.
7. The light emitting device package according to claim 1 , wherein the supporting layer comprises a metal.
8. The light emitting device package of claim 7 , wherein the metal includes at least one of Cu, Ni, Au, and an alloy thereof.
9. The light emitting device package according to claim 1 , further comprising an adhesion layer between the semiconductor light emitting structure and the supporting layer.
10. The light emitting device package according to claim 9 , wherein the adhesion layer has a multilayer structure.
11. The light emitting device package according to claim 1 , wherein the light extraction structure comprises at least one of an irregularity pattern, a photonic crystal, and a plurality of nano particles.
12. The light emitting device package according to claim 1 , wherein the light extraction structure is an integral part of the semiconductor light emitting structure.
13. The light emitting device package according to claim 1 , wherein the light extraction structure is arranged at a light emission surface of the semiconductor light emitting structure.
14. The light emitting device package according to claim 1 , further comprising a passivation layer arranged on the semiconductor light emitting structure.
15. The light emitting device package according to claim 1 , wherein the first electrode comprises at least one of two metals and a multilayer structure of at least two metal layers alternately arranged.
16. The light emitting device package according to claim 1 , wherein the first electrode comprises an ohmic contact layer and a reflection electrode.
17. The light emitting device package according to claim 1 , wherein the sub-mount comprises one of Si, AlN, ceramic, AlOx, Al2O3, BeO, and printed circuit board (PCB) substrate.
18. The light emitting device package of claim 1 , wherein the lens is disposed on a region vertically overlapped with the zener diode.
19. The light emitting device package of claim 1 , wherein the supporting layer is disposed between the first electrode and the first metal layer.
20. The light emitting device package of claim 1 , wherein the supporting layer comprises at least one of a metal and a semiconductor.
21. The light emitting device package of claim 1 , wherein the sub-mount is one of a planar sub-mount, a 3D sub-mount, and a 3D through hole interconnection (THI) sub-mount.
22. The light emitting device package according to claim 1 , further comprising a reflection plate disposed on a plurality of portions of the first metal layer and the second metal layer.
23. The light emitting device package according to claim 22 , wherein the reflection plate is separately disposed at a mount portion of the sub-mount.
24. The light emitting device package according to claim 1 , wherein the zener diode is disposed at a corner region of the second surface of the sub-mount.
25. The light emitting device package according to claim 1 , wherein at least one end portion of the first metal layer or the second metal layer is on a bottom surface of the sub-mount.
26. A light emitting device package comprising:
a sub-mount having a first surface and a second surface;
a first metal layer on the first surface of the sub-mount;
a second metal layer on the second surface;
a light emitting device on the first surface, the light emitting device comprising a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, wherein the first electrode is electrically connected to the first metal layer and the second electrode is electrically connected to the second metal layer, wherein the semiconductor light emitting structure comprises a light extraction structure,
a zener diode on the second surface such that the zener diode is electrically connected to the first-type electrode and the second-type electrode, wherein the zener diode is a distance apart from the light emitting device, and
a lens on the sub-mount, wherein the lens is on the light emitting device,
wherein the lens is on a region vertically overlapped with the zener diode, and
wherein at least one of the first metal layer and the second metal layer directly contacts the sub-mount.
27. The light emitting device package of claim 26 , wherein a distance between the lens and the zener diode is less than a distance between the lens and the light emitting device.
28. A light emitting device package comprising:
a sub-mount having a first surface and a second surface;
a first metal layer on the first surface of the sub-mount;
a second metal layer on the second surface of the sub-mount;
a light emitting device on the first surface, the light emitting device comprising a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, wherein the first electrode is electrically connected to the first metal layer and the second electrode is electrically connected to the second metal layer, wherein the semiconductor light emitting structure comprises a light extraction structure,
a zener diode on the second surface such that the zener diode is electrically connected to the first metal layer and the second metal layer, wherein the zener diode is arranged a distance apart from the light emitting device, and
a lens on the sub-mount, wherein the lens is over the light emitting device,
wherein a height of a top surface of light emitting device is less than a height of a second surface,
wherein the sub-mount has a cavity, the cavity having a bottom portion and an inclined portion, and
wherein the first metal layer has an inclined surface, and the inclined surface of the first metal layer is on the inclined portion of the cavity.
29. A light emitting device package comprising:
a sub-mount having;
a first metal layer and a second metal layer on a same direction of the sub-mount;
a light emitting device on a first surface, the light emitting device comprising a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, wherein the first electrode is electrically connected to the first metal layer and the second electrode is electrically connected to the second metal layer, wherein the semiconductor light emitting structure comprises a light extraction structure,
a zener diode on a second surface such that the zener diode is electrically connected to the first metal layer and the second metal layer, wherein the zener diode is a distance apart from the light emitting device, and
a lens on the sub-mount, wherein the lens is on the light emitting device,
wherein the sub-mount has a cavity, the cavity having a bottom portion and an inclined portion, and
wherein the first metal layer has an inclined surface, and the inclined surface of the first metal layer is on the inclined portion of the cavity.