Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus
An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.
1. A method of manufacturing a semiconductor device, comprising forming a laminated film wherein a silicon-containing oxide film and a metal-containing oxide film are alternately stacked on a substrate by alternately performing, a predetermined number of times,
(a) performing a first cycle a predetermined number of times, the first cycle comprising:
supplying a silicon-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate to form the silicon-containing oxide film; and
(b) performing a second cycle a predetermined number of times, the second cycle comprising: supplying a metal-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate to form the metal-containing oxide film.
2. The method according to claim 1 , wherein the steps (a) and (b) are alternately performed in the step of forming the laminated film to gradually decrease a stacking ratio of the metal-containing oxide film with respect to the silicon-containing oxide film.
3. The method according to claim 1 , wherein the silicon-containing source comprises at least one selected from a group consisting of chloride, fluoride, bromide and iodide.
4. The method according to claim 1 , wherein the silicon-containing source comprises at least one selected from a group consisting of hexachlorodisilane, dichlorosilane, trichlorosilane, tetrachlorosilane and octachlorotrisilane.
5. The method according to claim 1 , wherein the metal-containing source comprises at least one selected from a group consisting of chloride, fluoride, bromide and iodide.
6. The method according to claim 1 , wherein the oxidizing source comprises at least one selected from a group consisting of H 2 O, H 2 O 2 , a mixed gas of H 2 and O 3 and a mixed gas of H 2 and O 2 .
7. The method according to claim 1 , wherein the catalyst comprises at least one selected from a group consisting of ammonia, pyridine, trimethylamine, methylamine, triethylamine, aminopyridine, picoline, piperazine and lutidine.
8. The method according to claim 1 , wherein the metal-containing source comprises at least one selected from a group consisting of titanium, hafnium, and zirconium.
9. The method according to claim 1 , wherein the substrate is heated to a temperature ranging from room temperature to 200° C. in at least one of the steps (a) and (b).
10. The method according to claim 1 , wherein the substrate is heated to a temperature ranging from room temperature to 150° C. in at least one of the steps (a) and (b).
11. A method of manufacturing a semiconductor device, comprising:
(a) forming a laminated film wherein a silicon-containing oxide film and a metal-containing oxide film are alternately stacked on a substrate by alternately performing, a predetermined number of times, (a-1) performing a first cycle a predetermined number of times, the first cycle comprising: supplying a silicon-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate to form the silicon-containing oxide film; and (a-2) performing a second cycle a predetermined number of times, the second cycle comprising: supplying a metal-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate to form the metal-containing oxide film; and
(b) forming a silicon-containing oxide film on the laminated film by performing a third cycle a predetermined number of times, the third cycle comprising: supplying a silicon-55 containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate.