IP Library Granted Patent US 9,659,129
Granted Patent B2
US 9,659,129 · App. 14/253,205 · Granted May 23, 2017

Standard cell having cell height being non-integral multiple of nominal minimum pitch

Inventors: Shang-Chih Hsieh (Yangmei, TW); Hui-Zhong Zhuang (Kaohsiung, TW); Ting-Wei Chiang (New Taipei, TW); Chun-Fu Chen (Chiayi, TW); Hsiang-Jen Tseng (Hsinchu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
G06F17/5072H01L21/768H01L27/0207H01L27/11807H01L2027/11875H01L2924/0002
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Quick Facts
Patent No.
US 9,659,129
App. No.
14/253,205
Granted
May 23, 2017
Kind
B2
Abstract

An integrated circuit, manufactured by a process having a nominal minimum pitch of metal lines, includes a plurality of metal lines and a plurality of standard cells under the plurality of metal lines. The plurality of metal lines extends along a first direction, and the plurality of metal lines are separated, in a second direction perpendicular to the first direction, by integral multiples of the nominal minimum pitch. At least one of the plurality of standard cells has a cell height along the second direction, and the cell height is a non-integral multiple of the nominal minimum pitch.

Claims (21)

1. An integrated circuit manufactured by a process having a nominal minimum pitch of metal lines, comprising:

a plurality of metal lines extending along a first direction, the plurality of metal lines being separated, in a second direction perpendicular to the first direction, by integral multiples of the nominal minimum pitch; and

a plurality of standard cells under the plurality of metal lines, at least one of the plurality of standard cells having a cell height along the second direction, and the cell height being a non-integral multiple of the nominal minimum pitch.

2. The integrated circuit of claim 1 , wherein a ratio of the cell height to the nominal minimum pitch ranges from 6 to 16.

3. The integrated circuit of claim 2 , wherein the ratio of the cell height to the nominal minimum pitch is 7.5.

4. The integrated circuit of claim 1 , wherein a ratio of the cell height to the nominal minimum pitch is p/q, and p and q are integers.

5. The integrated circuit of claim 1 , wherein the at least one of the plurality of standard cells is a logic gate cell.

6. The integrated circuit of claim 5 , wherein the logic gate cell is an AND, OR, NAND, NOR, XOR, AOI, OAI, MUX, Flip-flop, BUFF, Latch, INV, delay, or clock cell.

7. The integrated circuit of claim 1 , wherein

all input/output signal ports of the at least one of the plurality of standard cells are positioned overlapping a first set of a plurality of virtual grid lines, and

the plurality of metal lines are positioned overlapping a second set of the plurality of virtual grid lines,

the plurality of virtual grid lines being in parallel, and two adjacent lines of the plurality of virtual grid lines being separated by the nominal minimum pitch.

8. An integrated circuit manufactured by a process having a nominal minimum pitch of metal lines, comprising:

a plurality of metal lines extending along a first direction, the plurality of metal lines being separated, in a second direction perpendicular to the first direction, by integral multiples of the nominal minimum pitch; and

a plurality of standard cells under the plurality of metal lines, at least one of the plurality of standard cells having a cell height along the second direction, and the cell height being a non-integral multiple of the nominal minimum pitch,

the nominal minimum pitch defining a plurality of virtual grid lines arranged along the first direction, two adjacent lines of the plurality of virtual grid lines being separated by the nominal minimum pitch.

9. The integrated circuit of claim 8 , wherein the at least one of the plurality of standard cells has an upper cell boundary and a lower cell boundary separated along the second direction, one of the upper cell boundary or the lower cell boundary coincides with one of the plurality of virtual grid lines, and the other one of the upper cell boundary or the lower cell boundary does not coincide with any of the plurality of virtual grid lines.

10. The integrated circuit of claim 8 , wherein a ratio of the cell height to the nominal minimum pitch ranges from 6 to 16.

11. The integrated circuit of claim 10 , wherein the plurality of virtual grid lines are arranged in parallel.

12. The integrated circuit of claim 8 , wherein all input/output signal ports of the at least one of the plurality of standard cells overlap a first set of the plurality of virtual grid lines.

13. The integrated circuit of claim 12 , wherein the plurality of metal lines overlap a second set of the plurality of virtual grid lines.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2014
From: HSIEH, SHANG-CHIH; ZHUANG, HUI-ZHONG; CHIANG, TING-WEI; CHEN, CHUN-FU; TSENG, HSIANG-JEN
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 033875/0208 →
Continuity (2)
Provisional Application 61818705 · May 2, 2013
Related Publication 20140327050A1 · Nov 6, 2014