Methods for extreme ultraviolet mask defect mitigation by multi-patterning
Methods for extreme ultraviolet (EUV) mask defect mitigation by using multi-patterning lithography techniques. In one exemplary embodiment, a method for fabricating an integrated circuit including identifying a position of a defect in a first EUV photolithographic mask, the photolithographic mask including a desired pattern and transferring the desired pattern to a photoresist material disposed on a semiconductor substrate. Transferring the desired pattern further transfers an error pattern feature to the photoresist material as a result of the defect in the first EUV photolithographic mask. The method further includes, using a second photolithographic mask, transferring a trim pattern to the photoresist material, wherein the trim pattern removes the error pattern feature from the photoresist material.
1. A method for fabricating an integrated circuit comprising:
identifying a position of a defect in a first EUV photolithographic mask, the first EUV photolithographic mask comprising a desired pattern;
transferring the desired pattern to a photoresist material disposed on a semiconductor substrate, wherein transferring the desired pattern further transfers an error pattern feature to the photoresist material as a result of the defect in the first EUV photolithographic mask; and
using a second photolithographic mask, transferring a trim pattern to the photoresist material, wherein the trim pattern removes the error pattern feature from the photoresist material, wherein transferring the trim pattern further removes a portion of the desired pattern from the photoresist material, and wherein the method further comprises, using a third photolithographic mask, transferring a replacement pattern to the photoresist material, wherein the replacement pattern replaces the portion of the desired pattern removed by the trim pattern.
2. The method of claim 1 , wherein using the second photolithographic mask comprises using a second EUV photolithographic mask.
3. The method of claim 1 , wherein using the second photolithographic mask comprises using a 193 nm UV photolithographic mask.
4. The method of claim 1 , wherein using the third photolithographic mask comprises using a third EUV photolithographic mask.
5. The method of claim 1 , transferring the desired pattern to the photoresist material comprises transferring the desired pattern to a positive tone photoresist material.
6. The method of claim 1 , transferring the desired pattern to the photoresist material comprises transferring the desired pattern to a negative tone photoresist material.
7. The method of claim 1 , further comprising providing the semiconductor substrate and depositing the photoresist material on the semiconductor substrate.
8. The method of claim 1 , further comprising, subsequent to using the second photoresist mask, developing the photoresist material.
9. The method of claim 8 , further comprising forming an integrated circuit structure on the semiconductor substrate subsequent to developing the photoresist material.