Quantum dot-fullerene junction based photodetectors

1. An optoelectronic device, comprising:

a first electrode;

a quantum dot layer disposed on the first electrode and comprising a plurality of quantum dots;

a fullerene layer disposed directly on the quantum dot layer, wherein the quantum dot layer and the fullerene layer form an electronic heterojunction; and

a second electrode disposed on the fullerene layer.

2. The optoelectronic device of claim 1 , wherein the first electrode or the second electrode is selected from the group consisting of conductive oxides, metals, metal alloys, metal-inclusive compounds, CNTs, and conductive polymers.

3. The optoelectronic device of claim 1 , wherein the quantum dots are selected from the group consisting of visible light-sensitive quantum dots, infrared-sensitive quantum dots, and ultraviolet-sensitive quantum dots.

4. The optoelectronic device of claim 1 , wherein the quantum dots have a composition selected from the group consisting of Group II-VI, Group I-III-VI, Group III-V, Group IV, Group IV-VI, and Group V-VI materials.

5. The optoelectronic device of claim 1 , wherein the quantum dots are composed of lead sulfide, lead selenide, lead telluride, mercury telluride, or alloys thereof.

6. The optoelectronic device of claim 1 , wherein the quantum dot layer has a thickness ranging from 5 nm to 5 μm.

7. The optoelectronic device of claim 1 , wherein the plurality of quantum dots comprises a plurality of first quantum dots and a plurality of second quantum dots, and the first quantum dots have a first average size and the second quantum dots have a second average size different from the first average size, or the first quantum dots have a first composition and the second quantum dots have a second composition different from the first composition.

8. The optoelectronic device of claim 1 , wherein the fullerenes are selected from the group consisting of C n fullerenes where n is 20 or greater, endohedral fullerenes, fullerene derivatives, and a combination of two or more of the foregoing.

9. The optoelectronic device of claim 1 , wherein the fullerene layer has a thickness ranging from 3 nm to 300 nm.

10. The optoelectronic device of claim 1 , comprising a hole blocking layer disposed on the fullerene layer, wherein the second electrode is disposed on the hole blocking layer.

11. The optoelectronic device of claim 10 , wherein the hole blocking layer has a composition selected from the group consisting of titanium oxides, zinc oxides, BCP, BPhen, NBPhen, metal chelates, and chemical relatives and derivatives of the foregoing.

12. The optoelectronic device of claim 1 , comprising an electron blocking layer disposed between the first electrode and the quantum dot layer.

13. The optoelectronic device of claim 12 , wherein the electron blocking layer has a composition selected from the group consisting of molybdenum oxides, tungsten oxides, copper oxides, nickel oxides, phthalocyanines, m-MTDATA, a-NPD, quantum dots, and chemical relatives and derivatives of the foregoing.

14. The optoelectronic device of claim 12 , wherein the electron blocking layer comprises a discontinuous layer.

15. The optoelectronic device of claim 14 , wherein the electron blocking layer comprises a pattern of electron blocking material.

16. The optoelectronic device of claim 1 , comprising an exciton blocking layer disposed on the fullerene layer or on the first electrode.

17. The optoelectronic device of claim 1 , wherein the quantum dot layer exhibits a charge carrier mobility greater than 1×10 −4 cm 2 /V-sec.

18. The optoelectronic device of claim 1 , wherein the quantum dot layer exhibits a charge carrier mobility ranging from greater than 1×10 −4 cm 2 N-sec to 10 cm 2 /V-sec.

19. The optoelectronic device of claim 1 , wherein the quantum dot layer is a chemically treated quantum dot layer that exhibits increased charge carrier mobility relative to an untreated quantum dot layer.

20. The optoelectronic device of claim 1 , wherein the quantum dot layer exhibits an interparticle spacing of 2 nm or less.

21. The optoelectronic device of claim 1 , wherein the optoelectronic device has a power conversion efficiency of at least 4.5% when illuminated by an incident white light beam of 100 mW/cm2.

22. A method for fabricating an optoelectronic device, the method comprising:

depositing a quantum dot layer on an electrode, the quantum dot layer comprising a plurality of quantum dots; and

depositing a fullerene layer directly on the quantum dot layer, wherein the quantum dot layer and the fullerene layer form an electronic heterojunction.

23. The method of claim 22 , wherein depositing the quantum dot layer comprises depositing a solution comprising the plurality of quantum dots and a solvent.

24. The method of claim 23 , wherein the solvent is selected from the group consisting of toluene, anisole, alkanes, butylamine, and water.

25. The method of claim 22 , wherein depositing the quantum layer comprises depositing a first quantum dot film on the fullerene layer, followed by depositing one or more additional quantum dot films on the first quantum dot film.

26. The method of claim 22 , comprising, after depositing the quantum dot layer, treating the quantum dot layer with a chemistry that increases a charge carrier mobility of the quantum dot layer.

27. The method of claim 26 , wherein the chemistry comprises a solution or vapor having a composition selected from the group consisting of ethanethiol, alkyl-thiols, alkenyl-thiols, alkynyl-thiols, aryl-thiols, ethanedithiol, benzendithiol, alkyl-polythiols, alkenyl-polythiols, alkynyl-polythiols, aryl-polythiols, carboxlyic acids, formic acid, methanol, toluene, isopropyl alcohol, chloroform, acetonitrile, acetic acid, butyl amine, 1,4 butyl diamine, alkyl-amines, alkenyl-amines, alkynyl-amines, aryl-amines alkyl-polyamines, alkenyl-polyamines, alkynyl-polyamines, aryl-polyamines.

28. The method of claim 22 , comprising depositing a hole blocking layer or an exciton blocking layer on the fullerene layer.

29. The method of claim 22 , comprising depositing an exciton blocking layer on the electrode.

30. The method of claim 22 , comprising depositing an electron blocking layer on the electrode, wherein the quantum dot layer is deposited on the electron blocking layer.

31. The method of claim 30 , comprising subjecting the electron blocking layer to an oxidizing or reducing treatment.

32. The method of claim 22 , comprising treating the quantum dot layer with a chemistry selected from a chemistry that reduces an interparticle spacing between quantum dots, a chemistry that reduces an as-deposited thickness of the quantum dot layer, or a chemistry that both reduces the interparticle spacing and the as-deposited thickness of the quantum dot layer.

33. The method of claim 32 , comprising reducing the interparticle spacing to 2 nm or less, or reducing the as-deposited thickness by 20 to 80%.