Semiconductor device
The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.
1. A semiconductor device comprising:
an oxide semiconductor film over a substrate;
a source electrode and a drain electrode over the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and
a gate electrode over the gate insulating film,
wherein the oxide semiconductor film comprises:
a first region in which a concentration of silicon is lower than or equal to 1.0 at. %; and
a pair of second regions, each of the pair of second regions comprising a dopant,
wherein the first region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film, and
wherein the first region comprises a crystal portion.
2. The semiconductor device according to claim 1 , wherein an end portion of the oxide semiconductor film is tapered at an angle of 20° to 50°.
3. The semiconductor device according to claim 1 , further comprising a base insulating film between the substrate and the oxide semiconductor film,
wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.
4. The semiconductor device according to claim 1 , wherein the concentration of silicon in the first region is lower than or equal to 0.1 at. %.
5. The semiconductor device according to claim 1 , further comprising an interlayer insulating film over the gate insulating film and the gate electrode.
6. The semiconductor device according to claim 1 , wherein a concentration of carbon in the first region is lower than or equal to 1.0×10 20 atoms/cm 3 .
7. The semiconductor device according to claim 1 , wherein the first region has a thickness less than or equal to 5 nm.
8. The semiconductor device according to claim 1 , wherein the dopant comprises one or more elements selected from the group consisting of phosphorus, arsenic, antimony, boron, aluminum, nitrogen, argon, helium, neon, indium, fluorine, chlorine, titanium, and zinc.
9. The semiconductor device according to claim 1 , wherein a concentration of dopant in each of the pair of second regions is higher than or equal to 5×10 18 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3 .
10. The semiconductor device according to claim 1 , wherein the pair of second regions and the gate electrode do not overlap each other.
11. A semiconductor device comprising:
an oxide semiconductor film over a substrate;
a source electrode and a drain electrode over the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film, wherein the gate insulating film comprises an oxide containing silicon; and
a gate electrode over the gate insulating film,
wherein the oxide semiconductor film comprises:
a first region in which a concentration of silicon is lower than or equal to 1.0 at. %; and
a pair of second regions, each of the pair of second regions comprising a dopant,
wherein the first region is located at an interface between the oxide semiconductor film and the gate insulating film and in contact with the gate insulating film,
wherein the first region comprises a crystal portion, and
wherein the dopant comprises argon.
12. The semiconductor device according to claim 11 , wherein an end portion of the oxide semiconductor film is tapered at an angle of 20° to 50°.
13. The semiconductor device according to claim 11 , further comprising a base insulating film between the substrate and the oxide semiconductor film,
wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.
14. The semiconductor device according to claim 11 , wherein the concentration of silicon in the first region is lower than or equal to 0.1 at. %.
15. The semiconductor device according to claim 11 , further comprising an interlayer insulating film over the gate insulating film and the gate electrode.
16. The semiconductor device according to claim 11 , wherein a concentration of carbon in the first region is lower than or equal to 1.0×10 20 atoms/cm 3 .
17. The semiconductor device according to claim 11 , wherein the first region has a thickness less than or equal to 5 nm.
18. The semiconductor device according to claim 11 , wherein the dopant comprises one or more elements selected from the group consisting of phosphorus, arsenic, antimony, boron, aluminum, nitrogen, argon, helium, neon, indium, fluorine, chlorine, titanium, and zinc.
19. The semiconductor device according to claim 11 , wherein a concentration of dopant in each of the pair of second regions is higher than or equal to 5×10 18 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3 .
20. The semiconductor device according to claim 11 , wherein the pair of second regions and the gate electrode do not overlap each other.