Nitride semiconductor substrate
View Patent ↗A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate 1 is prepared in such a manner that a buffer layer 3 and a semiconductor active layer 4 each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or −1° to −0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×10 18 to 1×10 21 cm −3 , the Si single crystal substrate 2 has a SiO 2 film on the back, and the total thickness of the buffer layer 3 and the semiconductor active layer 4 is 4 to 10 μm.
1. A nitride semiconductor substrate for a high withstand voltage power device in which a buffer layer and a semiconductor active layer each comprising a group 13 nitride are stacked one by one on one principal plane of a 6-inch Si single crystal substrate with a thickness of 600 to 1000 μm, and the total thickness of said buffer layer and said semiconductor active layer is 4 to 10 μm, wherein
the buffer layer is one kind of layer consisting of a composite layer in which a pair of an AlN single crystal layer and a GaN single crystal layer are repeatedly stacked so that the AlN single crystal layer is formed in contact with the one principal plane of the Si single crystal substrate, and a further GaN single crystal layer is formed in contact with the top GaN layer of the composite layer,
the one principal plane has an offset angle of 0.1° to 1° or −1° to −0.1° with respect to a (111) plane,
an average dopant concentration in a bulk of the Si single crystal substrate is 1×10 18 to 1×10 21 cm −3 ,
said dopant is boron, and
said Si single crystal substrate has a SiO 2 film with a thickness of 300 to 600 nm on the back which is a face opposite the one principal plane.
2. A nitride semiconductor substrate as claimed in claim 1 , wherein said SiO 2 film is formed at a growth temperature of 400° C. to 600° C.