Solid-state imaging device with suppression of color mixture, manufacturing method thereof, and electronic apparatus

1. A solid-state imaging device having a backside illuminated structure, comprising:

a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix;

an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench having at least one of an insulting film and a void therein; and

a light-receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer,

wherein the semiconductor layer in the element isolation region has an opposite conductivity type to that of a charge storage region which forms the photoelectric conversion portion, the semiconductor layer has the void therein, the void is exposed to a rear surface of the semiconductor substrate, and the void exposed to the rear surface of the semiconductor substrate is filled with the insulting film.

2. The solid-state imaging device according to claim 1 , wherein the trench has the insulating film and the void therein.

3. The solid-state imaging device according to claim 2 , wherein the insulating film is a silicon oxide film.

4. The solid-state imaging device according to claim 2 , wherein the element isolation region is providing between at least two of the pixels, the at least two pixels having shared transistors.

5. The solid-state imaging device according to claim 1 , wherein the insulating film is a silicon oxide film.

6. An electronic apparatus comprising: a solid-state imaging device;

an optical system which guides incident light to a photoelectric conversion portion of the solid-state imaging device; and

a signal processing circuit which processes an output signal of the solid-state imaging device,

wherein the solid-state imaging device is the solid-state imaging device according to claim 1 .

7. A solid-state imaging device having a backside illuminated structure, comprising:

a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix;

an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench having at least one of an insulating film and a void therein; and

a light-receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer,

wherein the semiconductor layer in the element isolation region has an opposite conductivity type to that of a charge storage region which forms the photoelectric conversion portion, the semiconductor layer has the void therein, the void is exposed to a rear surface of the semiconductor substrate, the void exposed to the rear surface of the semiconductor substrate is filled with a light-shielding layer with the insulating film provided therebetween.

8. A method for manufacturing a solid-state imaging device, wherein the solid-state imaging device is the solid-state imaging device according to claim 7 .

9. An electronic apparatus comprising: a solid-state imaging device;

an optical system which guides incident light to a photoelectric conversion portion of the solid-state imaging device; and

a signal processing circuit which processes an output signal of the solid-state imaging device,

wherein the solid-state imaging device is the solid-state imaging device according to claim 7 .

10. A solid-state imaging device having a backside illuminated structure, comprising:

a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix;

an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench having at least one of an insulating film and a void therein; and

a light-receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer,

wherein the semiconductor layer in the element isolation region has as opposite conductivity type to that of a charge storage region which forms the photoelectric conversion portion, the semiconductor layer has the void therein, the void is exposed to a rear surface of the semiconductor substrate, and the void exposed to the rear surface of the semiconductor substrate is filled with a light-shielding layer.

11. A method for manufacturing a solid-state imaging device, wherein the solid-state imaging device is the solid-state imaging device according to claim 10 .

12. An electronic apparatus comprising: a solid-state imaging device;

an optical system which guides incident light to a photoelectric conversion portion of the solid-state imaging device; and

a signal processing circuit which processes an output signal of the solid-state imaging device,

wherein the solid-state imaging device is the solid-state imaging device according to claim 10 .

13. A solid-state imaging device having a backside illuminated structure, comprising:

a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix;

an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench having at least one of an insulating film and a void therein; and

a light-receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer,

wherein the semiconductor layer in the element isolation region has an opposite conductivity type to that of a charge storage region which forms the photoelectric conversion portion, the semiconductor layer has the void therein, the void is exposed to a rear surface of the semiconductor substrate, the void exposed to the rear surface of the semiconductor substrate is filled with the insulating film, and the insulating film is a film having a negative fixed charge.

14. A method for manufacturing a solid-state imaging device, wherein the solid-state imaging device is the solid-state imaging device according to claim 1 .

15. A method for manufacturing a solid-state imaging device, wherein the solid-state imaging device is the solid-state imaging device according to claim 13 .

16. An electronic apparatus comprising: a solid-state imaging device;

an optical system which guides incident light to a photoelectric conversion portion of the solid-state imaging device; and

a signal processing circuit which processes an output signal of the solid-state imaging device,

wherein the solid-state imaging device is the solid-state imaging device according to claim 13 .