Semiconductor packages having wire bond wall to reduce coupling
View Patent ↗A device (e.g., a Doherty amplifier) housed in an air cavity package includes one or more isolation structures over a surface of a substrate and defining an active circuit area. The device also includes first and second adjacent circuits within the active circuit area, first and second leads coupled to the isolation structure(s) between opposite sides of the package and electrically coupled to the first circuit, third and fourth leads coupled to the isolation structure(s) between the opposite sides of the package and electrically coupled to the second circuit, a first terminal over the first side of the package between the first lead and the third lead, a second terminal over the second side of the package between the second lead and the fourth lead, and an electronic component coupled to the package and electrically coupled to the first terminal, the second terminal, or both the first and second terminals.
1. A device housed in an air cavity package, the device comprising:
a substrate having a top surface;
one or more isolation structures over the top surface of the substrate, wherein an area over the top surface of the substrate within sidewalls of the one or more isolation structures defines an active circuit area;
a first circuit over the top surface of the substrate within the active circuit area;
a second circuit over the top surface of the substrate within the active circuit area and adjacent to the first circuit;
a first lead coupled to a portion of the one or more isolation structures that is proximate to a first side of the package, wherein the first lead is electrically coupled to the first circuit;
a second lead coupled to a portion of the one or more isolation structures that is proximate to a second side of the package, wherein the second lead is electrically coupled to the first circuit;
a third lead coupled to the portion of the one or more isolation structures that is proximate to the first side of the package, wherein the third lead is electrically coupled to the second circuit;
a fourth lead coupled to the portion of the one or more isolation structures that is proximate to the second side of the package, wherein the fourth lead is electrically coupled to the second circuit;
a first terminal over the first side of the package between the first lead and the third lead;
a second terminal over the second side of the package between the second lead and the fourth lead;
a plurality of connection pads over the substrate and arranged in a row between the first circuit and the second circuit; and
a wire bond wall coupled to the package and electrically coupled to the first terminal, the second terminal, or both the first and second terminals, wherein the wire bond wall includes a wire bond having a first end coupled to a first one of the connection pads and a second end coupled to a second one of the connection pads.
2. The device of claim 1 , wherein the wire bond wall is coupled between the first terminal and the second terminal, and the wire bond wall is configured to reduce an electromagnetic coupling between the first circuit and the second circuit during an operation of at least one of the first circuit and the second circuit.
3. The device of claim 1 , the wire bond wall includes one or more additional wire bonds that electrically interconnect the connection pads.
4. The device of claim 1 , wherein the wire bond wall is connected to one or more integrated passive devices.
5. The device of claim 1 , further comprising a lid coupled to the one or more isolation structures.
6. The device of claim 1 , wherein the substrate includes a conductive flange.
7. A Doherty amplifier package, comprising:
a substrate having a top surface;
one or more isolation structures over the top surface of the substrate, wherein an area over the top surface of the substrate within sidewalls of the one or more isolation structures defines an active circuit area;
a carrier amplifier over the top surface of the substrate within the active circuit area;
a peaking amplifier over the top surface of the substrate within the active circuit area and adjacent to the carrier amplifier;
a first lead coupled to a portion of the one or more isolation structures that is proximate to a first side of the package, wherein the first lead is electrically coupled to an input to the carrier amplifier;
a second lead coupled to a portion of the one or more isolation structures that is proximate to a second side of the package, wherein the second lead is electrically coupled to an output of the carrier amplifier;
a third lead coupled to the portion of the one or more isolation structures that is proximate to the first side of the package, wherein the third lead is electrically coupled to an input to the peaking amplifier;
a fourth lead coupled to the portion of the one or more isolation structures that is proximate to the second side of the package, wherein the fourth lead is electrically coupled to an output of the peaking amplifier;
a first terminal over the first side of the package between the first lead and the third lead;
a second terminal over the second side of the package between the second lead and the fourth lead; and
a plurality of connection pads over the substrate and arranged in a row between the carrier amplifier and the peaking amplifier; and
a wire bond wall coupled to the package and electrically coupled to the first terminal, the second terminal, or both the first and second terminals, wherein the wire bond wall includes a wire bond having a first end coupled to a first one of the connection pads and a second end coupled to a second one of the connection pads.
8. The Doherty amplifier package of claim 7 , wherein the wire bond wall comprises a plurality of wire bonds coupled between the first terminal and the second terminal, and the plurality of wire bonds extend through a region of the active circuit area located between the carrier amplifier and the peaking amplifier, the plurality of wire bonds forming a wire bond wall configured to reduce an electromagnetic coupling between the carrier amplifier and the peaking amplifier during an operation of at least one of the carrier amplifier and the peaking amplifier.
9. The Doherty amplifier package of claim 8 , wherein the plurality of wire bonds are connected to an integrated passive device.
10. The Doherty amplifier package of claim 9 , wherein the integrated passive device has at least one of a capacitance and an inductance selected to reduce an electromagnetic coupling between the carrier amplifier and the peaking amplifier over a range of frequencies during the operation of at least one of the carrier amplifier and the peaking amplifier.
11. A device comprising:
a substrate having a top surface;
a first circuit over the top surface of the substrate;
a second circuit over the top surface of the substrate and adjacent to the first circuit;
a plurality of connection pads over the substrate and arranged in a row between the first circuit and the second circuit; and
a wire bond wall that includes a first wire bond having two ends coupled to a first set of two of the connection pads, and a second wire bond having two ends coupled to a second set of two of the connection pads.
12. The device of claim 11 , wherein at least one of the plurality of connection pads is electrically coupled to the substrate.
13. The device of claim 11 , further comprising:
a first lead that is proximate to a first side of the package, wherein the first lead is electrically coupled to the first circuit;
a second lead that is proximate to a second side of the package, wherein the second lead is electrically coupled to the first circuit;
a third lead that is proximate to the first side of the package, wherein the third lead is electrically coupled to the second circuit;
a fourth lead that is proximate to the second side of the package, wherein the fourth lead is electrically coupled to the second circuit;
a first terminal over the first side of the package between the first lead and the third lead; and
a second terminal over the second side of the package between the second lead and the fourth lead, wherein the wire bond wall is electrically coupled to the first terminal, the second terminal, or both the first and second terminals.
14. The device of claim 11 wherein the first circuit includes a first power amplifier circuit, and the second circuit includes a second power amplifier circuit.
15. The device of claim 14 , wherein the first power amplifier circuit includes a first transistor, and the second power amplifier circuit includes a second transistor, and wherein at least some of the plurality of connection pads are positioned between the first transistor and the second transistor.
16. The device of claim 11 , wherein the wire bond wall includes:
a first row of wire bonds that includes the first wire bond connected to the first set of two of the connection pads, and at least one additional first wire bond connected to a third set of the plurality of connection pads; and
a second row of wire bonds that includes the second wire bond connected to the second set of two of the connection pads, and at least one additional second wire bond connected to a fourth set of the plurality of connection pads, wherein the connection pads in the first and third sets of connection pads are positioned between the connection pads in the second and fourth sets of connection pads so that the wire bond wall forms a mesh.