Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
1. A semiconductor image sensor device, comprising:
a substrate having a front side and a back side opposite the front side;
an interconnect structure disposed over the front side of the substrate;
a plurality of pixels disposed in the substrate, the pixels being configured to detect light that enters the substrate through the back side;
a dielectric layer disposed over the back side of the substrate;
a plurality of light-reflective components that each have:
a first segment extending through the dielectric layer and extending at least partially into the substrate; and
a second segment protruding out of the dielectric layer from the back side;
wherein the pixels are each disposed between two respective light-reflective components;
a plurality of color filters that are each disposed between two respective second segments of the light-reflective components; and
a passivation material disposed on sidewalls of the color filters.
2. The semiconductor image sensor device of claim 1 , wherein the light-reflective components each contain tungsten.
3. The semiconductor image sensor device of claim 1 , wherein the passivation material is conformally coated around the second segment of each of the light-reflective components, including on a back side surface of each of the light-reflective components.
4. The semiconductor image sensor device of claim 1 , further comprising an antireflective coating (ARC) layer and a buffer layer disposed between the substrate and the dielectric layer, wherein the first segments of the light-reflective components extend through the ARC layer and the buffer layer.
5. A semiconductor image sensor device, comprising:
a substrate having a plurality of radiation-sensing regions formed therein, the substrate having a first side and a second side;
a dielectric layer over the second side of the substrate;
a plurality of trenches, the trenches extending through the dielectric layer and at least partially through the substrate;
a plurality of isolation structures in the trenches, wherein portions of the isolation structures protrude out of the dielectric layer; and
a passivation layer disposed around the portions of the isolation structures that protrude out of the dielectric layer, wherein the passivation layer is different from the dielectric layer.
6. The semiconductor image sensor device of claim 5 , wherein the portions of the isolation structures protruding out of the dielectric layer and a remaining portion of the dielectric layer collectively define a plurality of openings, the device further comprising:
a plurality of color filters disposed in the plurality of openings, respectively.
7. The semiconductor image sensor device of claim 5 , further comprising: an interconnect structure over the first side of the substrate.
8. The semiconductor image sensor device of claim 5 , further comprising:
an antireflective coating (ARC) layer over the second side of the substrate; and
a buffer layer over the ARC layer;
wherein the dielectric layer is formed over the buffer layer, and
wherein the trenches are formed so that they extend through the ARC layer and the buffer layer.
9. The semiconductor image sensor device of claim 5 , wherein the isolation structures include a material that reflects radiation.
10. The semiconductor image sensor device of claim 9 , wherein the isolation structures include tungsten.
11. The semiconductor image sensor device of claim 9 , wherein the portions of the isolation structures protruding out of the dielectric layer include polished surfaces.
12. A semiconductor image sensor device, comprising:
a substrate having a first side and a second side that is opposite the first side;
an interconnect structure disposed over the first side of the substrate;
a plurality of radiation-sensing regions located in the substrate, the radiation-sensing regions being configured to sense radiation that enters the substrate from the second side; a plurality of isolation structures that are each disposed between two respective radiation-sensing regions, wherein the isolation structures protrude out of the second side of the substrate; and
a passivation material disposed on surfaces of the isolation structures facing the second side.
13. The semiconductor image sensor device of claim 12 , wherein the isolation structures contain a material that reflects radiation.
14. The semiconductor image sensor device of claim 13 , wherein the isolation structures contain tungsten.
15. The semiconductor image sensor device of claim 12 , further comprising one or more layers disposed over the second side of the substrate, wherein the isolation structures protrude out of the one or more layers toward the second side.
16. The semiconductor image sensor device of claim 15 , wherein the one or more layers include an antireflective coating (ARC) layer, a buffer layer, and a dielectric layer.
17. The semiconductor image sensor device of claim 15 , wherein:
portions of the isolation structures protruding out of the one or more layers and the one or more layers collectively define a plurality of openings; and
further comprising a plurality of color filters that are each disposed in a respective one of the openings.
18. The semiconductor image sensor device of claim 17 , wherein the passivation material separates the color filters from the isolation structures.