Directional chemical oxide etch technique
A method of forming a trench in an oxide layer; where the oxide layer is formed on top of a nitride layer. The trench is formed using an iterative etching technique until the nitride layer is exposed, each iterative etching step includes; using an isotropic etching technique to remove a portion of the oxide layer, the isotropic etching technique produces a byproduct that remains along a sidewall and a bottom of the trench, then using an anisotropic etching technique to remove the salt from the bottom of the trench, leaving salt on the sidewalls of the trench.
1. A method comprising:
forming a semiconductor structure including a source-drain region in a substrate and adjacent to a gate structure and a nitride layer on the source-drain region, wherein the gate structure includes a gate, a gate cap on a top surface of the gate, and a gate spacer on a sidewall surface of the gate and a sidewall surface of the gate cap;
forming a dielectric layer on the nitride layer and on the gate structure;
forming a contact trench in the dielectric layer by iteratively etching until the nitride layer is exposed, the contact trench exposing the gate cap and the gate spacer, each iterative etching step comprising:
removing a portion of the dielectric layer using an isotropic etching technique, the isotropic etching technique produces a byproduct that remains along a sidewall and a bottom of the contact trench; and
removing the byproduct only from the bottom of the contact trench using an anisotropic etching technique such that the byproduct present along the sidewall of the contract trench remains intact; and
forming a nitride trench in the nitride layer by iteratively etching until the source-drain region is exposed, each iterative etching step comprising:
oxidizing portions of the nitride layer, the gate cap and the gate spacer that are exposed by the contact trench; and
removing the oxidized portions of the nitride layer, the gate cap and the gate spacer using an isotropic etching technique.
2. The method of claim 1 , wherein the isotropic etching technique is a chemical oxide removal.
3. The method of claim 1 , wherein the anisotropic etching technique is a low bias anisotropic selective sputtering.
4. The method of claim 1 , wherein the byproduct is an ammonium hexafluorosilicate.
5. The method of claim 1 , wherein gas cluster ion beams are used to oxidize the portions of the nitride layer, the gate cap and the gate spacer.
6. The method of claim 1 , wherein low bias oxygen plasma sources are used to oxidize the portions of the nitride layer, the gate cap and the gate spacer.
7. The method of claim 1 , wherein chemical oxide removal etching is used to remove the oxidized portions of the nitride layer, the gate cap and the gate spacer.
8. The method of claim 1 , wherein the gate cap has a thickness greater than a thickness of the nitride layer.
9. The method of claim 1 , wherein each of the nitride layer, the gate cap and the gate spacer comprises a high density plasma nitride.
10. The method of claim 1 , wherein the dielectric layer comprises a combination of flowable chemical vapor deposition oxide, high density plasma oxide and plasma enhanced tetra ethyloxy silane oxide.
11. The method of claim 1 , further comprising forming a mask layer over the dielectric layer prior to the forming the contact trench.