Load reduction dual in-line memory module (LRDIMM) and method for programming the same
View Patent ↗A method is disclosed for providing memory bus timing of a load reduction dual inline memory module (LRDIMM). The method includes: determining a latency value of a dynamic random access memory (DRAM) of the LRDIMM; determining a modified latency value of the DRAM that accounts for a delay caused by a load reduction buffer (LRB) that is deployed between the DRAM and a memory bus; storing the modified latency value in a serial presence detector (SPD) of the LRDIMM; and providing memory bus timing for the LRDIMM based on the modified latency value, wherein the memory bus timing is compatible with a registered dual inline memory module (RDIMM).
1. A method for providing memory bus timing of a load reduction dual inline memory module (LRDIMM) comprising:
determining a latency value of a dynamic random access memory (DRAM) of the LRDIMM;
determining a modified latency value of the DRAM that accounts for a delay caused by a load reduction buffer (LRB) that is deployed between the DRAM and a memory bus;
storing the modified latency value in a serial presence detector (SPD) of the LRDIMM; and
providing memory bus timing for the LRDIMM based on the modified latency value,
wherein the memory bus timing is compatible with a registered dual inline memory module (RDIMM).
2. The method of claim 1 , the LRDIMM further comprising a modified latency (ML) circuit deployed between the DRAM and the memory bus.
3. The method of claim 1 , further comprising modifying a specified supported column address select latency (CL) bitmap.
4. The method of claim 3 , further comprising shifting bits in the CL bitmap to respective next higher value positions.
5. The method of claim 1 , further comprising increasing a minimum column address select latency time (tAAmin), a minimum write recovery time (tWRmin), and a minimum internal write to read command delay time (tWTRmin) by a respective predetermined amount.
6. The method of claim 5 , the predetermined amount for tAAmin, tWRmin and tWTRmin being respectively 1.5ns, 1.5ns, and 2.625ns, provided the DRAM is a DDR3.
7. The method of claim 1 , further comprising determining a column address select latency (CL) value and modifying the CL value into a modified CL value.
8. The method of claim 1 , further comprising determining a column address select write latency (CWL) value and modifying the CWL value into a modified CWL value.
9. The method of claim 1 , further comprising determining a write recovery (WR) value and modifying the WR value into a modified WR value.
10. The method of claim 1 , further comprising determining a coded representation of an additive latency (AL) value and modifying the coded representation of the AL value.
11. The method of claim 10 , wherein the coded representation of the AL value indicating the AL is CL−2, and the modified coded representation of the AL value indicating the AL value is CL−1, wherein CL is a coded representation for a column address select latency of the DRAM.
12. The method of claim 1 , the LRDIMM further comprising a load reduction register phase lock loop (LRPLL) for providing a control path from the memory bus to the DRAM.
13. The method of claim 12 , wherein a column address select latency (CL) value has predetermined value of CL−1, and wherein CL is a coded representation for a column address select latency of the DRAM.
14. The method of claim 1 , wherein a Basic Input/Output System (BIOS) connected to the memory bus modifies programming values of the LRDIMM and sends the modified programming values to the LRDIMM over the memory bus.
15. A load reduction dual inline memory module (LRDIMM) comprising:
a dynamic random access memory (DRAM);
a load reduction buffer (LRB);
a host interface configured to connect to a host over a memory bus;
a modified latency (ML) circuit that is configured to receive original mode register set (MRS) instructions including a latency value from the host, determine modified MRS instructions including modified latency values, and forward the modified MRS instructions to the DRAM,
wherein the modified MRS instructions provides memory bus timing for the LRDIMM that is compatible with a registered dual inline memory module (RDIMM).
16. The LRDIMM of claim 15 , wherein the modified latency circuit comprises a mode register zero (MR 0 ) modification circuit, wherein the MR 0 modification circuit is configured to generate a modified column address select latency (CL) value from a CL value received from the memory bus and transmit the modified CL value to the DRAM.
17. The LRDIMM of claim 15 , wherein the modified latency circuit comprises a mode register zero (MR 0 ) modification circuit, wherein the MR 0 modification circuit is configured to generate a modified write recovery (WR) value from a WR value received from the memory bus and transmit the modified WR value to the DRAM.
18. The LRDIMM of claim 15 , wherein the modified latency circuit further comprises a mode register two (MR 2 ) modification circuit that is configured to generate a modified column address select write latency (CWL) value from a CWL value received from the memory bus and transmit the modified CWL value to the DRAM.
19. The LRDIMM of claim 15 , the modified latency circuit further comprising a mode register one (MR 1 ) modification circuit, wherein the MR 1 modification circuit is configured to generate a modified coded representation of an additive latency (AL) value from an AL value received from the memory bus and transmit the modified coded representation of the AL value.
20. The LRDIMM of claim 15 , the modified latency circuit further comprising a conditional command delay stage for inserting an additional I-clock delay into a control path between the memory bus and the DRAM, wherein the coded representation of the AL value has a predetermined value, and the predetermined value is CL−1, wherein CL is a coded representation for a column address select latency of the DRAM.