Rework and stripping of complex patterning layers using chemical mechanical polishing

1. A method for making a semiconductor structure comprising:

providing a hardmask layer on an uppermost surface of a substrate;

forming a material stack on the hardmask layer, wherein the material stack includes at least one pattern transfer layer and a template layer present on the pattern transfer layer;

forming at least one opening in the template layer;

forming a patterned structure in the opening, the patterned structure comprising a first self-assembled region and a second self-assembled region;

removing the second self-assembled region to provide a first pattern, wherein the first pattern is defined by the first self-assembled region;

transferring the first pattern into the at least one pattern transfer layer to provide a second pattern;

removing the first self-assembled region; and

removing residues of the first self-assembled region, remaining portions of the template layer, remaining portions of the at least one pattern transfer layer from the substrate by performing a chemical mechanical polishing (CMP) process.

2. The method of claim 1 , wherein the at least one pattern transfer layer comprises an organic planarization layer (OPL) and an antireflective coating (ARC) layer present on the OPL.

3. The method of claim 2 , wherein the OPL comprises near-frictionless carbon (NFC) material, diamond-like carbon, polyarylene ether, or polyimide.

4. The method of claim 2 , wherein the ARC layer comprises a silicon-containing ARC (SiARC).

5. The method of claim 1 , wherein the template layer is a single layer structure comprising polymethacrylate or polyester.

6. The method of claim 1 , wherein the template layer has a multilayer structure comprising another OPL and another ARC layer present on the another OPL.

7. The method of claim 6 , wherein the another ARC layer comprises a SiARC.

8. The method of claim 1 , wherein the patterned structure comprises a block copolymer.

9. The method of claim 8 , wherein the block coploymer comprises poly(styrene-b-methyl methacrylate), poly(styrene-b-vinyl pyridine), poly(styrene-b-butadiene), poly(styrene-b-isoprene), poly(styrene-b-alkenyl aromatics), poly(isoprene-b-ethylene oxide), poly(styrene-b-(ethylene-propylene)), poly(ethylene oxide-b-caprolactone), poly(butadiene-b-ethylene oxide), poly(styrene-b-t-butyl (meth)acrylate), poly(methyl methacrylate-b-t-butyl methacrylate), poly(ethylene oxide-b-propylene oxide), poly(styrene-b-tetrahydrofuran), poly(styrene-b-dimethylsiloxane), poly(styrene-b-ferrocenyldimethylsilane), poly(styrene-b-isoprene-b-ethylene oxide), poly(styrene-b-isoprene-b-methyl methacrylate), or poly(styrene-b-ferrocendimethylsilane-b-isoprene).

10. The method of claim 1 , wherein the hardmask layer comprises oxide, nitride, oxynitride, or a combination thereof.

11. The method of claim 10 , wherein the hardmask layer comprises titanium nitride or silicon oxide.

12. The method of claim 1 , wherein the performing CMP process comprises using a CMP slurry.

13. The method of claim 12 , wherein the CMP slurry comprises silicon abrasive particles.

14. The method of claim 12 , wherein the CMP slurry has a pH value from 6 to 10.5.

15. The method of claim 1 , wherein the performing CMP process is conducted under a pressure from 0.5 psi to 2 psi.

16. The method of claim 1 , wherein the forming the at least one opening in the template layer comprises:

providing a photoresist layer on a top surface of the template layer;

patterning the photoresist layer to define the at least one opening in the photoresist layer; and

transferring the at least one opening into the template layer.

17. The method of claim 1 , wherein said forming said patterned structure comprises:

depositing a self-assembly material; and

annealing said self-assembly material to cause microphase separation of said self-assembly material.

18. The method of claim 1 , wherein the transferring the first pattern into the at least one pattern transfer layer is accomplished by a dry etch, a wet chemical etch, or a combination thereof.

19. The method of claim 1 , further comprising transferring the second pattern into the hardmask layer prior to the removing the first self-assembled region.