Method for producing a silicon-germanium film with variable germanium content
The substrate is provided with a first semiconducting area partially covered by a first masking pattern to define a protected surface and an open surface. A continuous layer of silicon-germanium is deposited in non-selective manner on the first semiconducting area and on the first gate pattern. The continuous silicon-germanium layer forms an interface with the first semiconducting area. A diffusion/condensation annealing is performed to make the germanium atoms diffuse from the silicon-germanium layer to the open surface of the first semiconducting area. The masking pattern is a gate stack of the transistor or is used to define the shape of the gate stack in an electrically insulating layer so as to form a self-aligned gate stack with the source and drain areas.
1. A fabrication method of a field effect transistor successively comprising:
providing a substrate provided with a first semiconducting area partially covered by a first masking pattern to define a protected surface and an open surface,
depositing a continuous silicon-germanium layer on the first semiconducting area and on the first masking pattern, in non-selective manner, the continuous silicon-germanium layer completely covering the first semiconducting area and the first masking pattern, so as to form an interface between the continuous silicon-germanium layer and the first semiconducting area,
applying a diffusion annealing configured to make the germanium atoms diffuse from the silicon-germanium layer to the open surface of the first semiconducting area,
depositing an electrically insulating layer so as to cover the masking pattern and source and drain areas,
wherein the masking pattern is a gate stack of the field effect transistor or is used to define a shape of a gate stack in the electrically insulating layer so as to form said gate stack which is self-aligned with the source and drain areas and to form germanium-enriched source and drain areas when diffusion annealing is performed.
2. The method according to claim 1 , wherein the silicon-germanium layer comprises a polycrystalline phase above the open surface of the first semiconducting area before applying the diffusion annealing.
3. The method according to claim 1 , wherein the silicon-germanium layer comprises an amorphous phase above the open surface of the first semiconducting area before applying the diffusion annealing.
4. The method according to claim 1 , wherein the diffusion annealing is a condensation annealing performed with an oxidizing atmosphere.
5. The method according to claim 1 , wherein the continuous silicon-germanium layer is deposited at a temperature lower than 600° C.
6. The method according to claim 1 , wherein the continuous silicon-germanium layer is deposited at a temperature lower than 300° C.
7. The method according to claim 1 , wherein the substrate includes a second semiconducting area separated from the first semiconducting area by an electrically insulating insulation pattern, the continuous silicon-germanium layer covering the electrically insulation pattern.
8. The method according to claim 1 , wherein the substrate comprises a second semiconducting area covered by a protection layer separating the second semiconducting area and the continuous silicon-germanium layer.
9. The method according to claim 1 , wherein the first semiconducting area is made from a silicon-germanium alloy which is compression strained before applying the diffusion annealing.
10. The method according to claim 1 , wherein the substrate successively comprises a support, an electrically insulating film, and the first semiconducting area.
11. The method according to claim 1 , further comprising elimination of the masking pattern so as to form a cavity in the electrically insulating layer, the cavity then being filled by a gate electrode.
12. The method according to claim 1 , wherein masking pattern and the diffusion annealing are configured so as to induce a uniaxial compression strain in a conduction channel connecting the germanium-enriched source and drain areas.
13. The method according to claim 1 , wherein a thickness of the masking layer is between three and ten times greater than a thickness of the silicon-germanium layer.
14. The method according to claim 1 , wherein the first semiconducting area is salient from the substrate and is configured to form a transistor of FinFET type.
15. The method according to claim 1 , further comprising a thickening step configured for thicken the source and drain areas after applying the diffusion annealing and before depositing the electrically insulating layer.