Composite semiconductor device with multiple threshold voltages
View Patent ↗A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures includes a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor.
1. A device comprising:
a semiconductor substrate;
a first constituent transistor comprising a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another; and
a second constituent transistor comprising a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another;
wherein the first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another;
wherein each transistor structure of the first plurality of transistor structures comprises a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor; and
wherein the first and second constituent transistors are arranged as inner and outer devices, respectively.
2. The device of claim 1 , wherein each transistor structure of the first plurality of transistor structures comprises:
a body region disposed in the semiconductor substrate, having a first conductivity type, and in which the non-uniform channel is formed during operation; and
a halo region disposed within the body region, having the first conductivity type, and having a higher dopant concentration level than the body region.
3. The device of claim 1 , wherein the first plurality of transistor structures are laterally surrounded by the second plurality of transistor structures.
4. The device of claim 1 , wherein the first plurality of transistor structures are centered within the second plurality of transistor structures.
5. The device of claim 1 , wherein the first and second pluralities of transistor structures are not electrically isolated from one another.
6. The device of claim 1 , wherein:
each transistor structure of the second plurality of transistor structures comprises a source extension region in the semiconductor substrate; and
each transistor structure of the first plurality of transistor structures does not comprise a source extension region in the semiconductor substrate.
7. The device of claim 1 , wherein the first and second constituent transistors are laterally diffused metal-oxide-semiconductor (LDMOS) transistors.
8. The device of claim 1 , wherein a respective transistor structure of the first plurality of transistor structures is aligned with a respective transistor structure of the second plurality of transistor structures such that the respective transistor structures share a common gate supported by the semiconductor substrate.
9. A device comprising:
a semiconductor substrate;
a first constituent transistor comprising a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another; and
a second constituent transistor comprising a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another;
wherein the first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another;
wherein each transistor structure of the first plurality of transistor structures comprises a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor; and
wherein:
each transistor structure of the first and second pluralities of transistor structures comprises a source region disposed within the body region;
each body region comprises a plurality of body contact regions; and
the source region comprises a plurality of constituent source regions disposed in a laterally alternating arrangement with the plurality of body contact regions.
10. The device of claim 9 , wherein a lateral boundary between adjacent transistor structures of the first constituent transistor and the second constituent transistor is disposed in one of the plurality of body contact regions.
11. A device comprising:
a semiconductor substrate;
a first constituent transistor comprising a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another; and
a second constituent transistor comprising a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another;
wherein the first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another;
wherein each transistor structure of the first plurality of transistor structures comprises a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor; and
wherein:
each transistor structure of the first and second pluralities of transistor structures comprises a body region in which a channel is formed during operation;
the channel of each transistor structure of the first and second pluralities of transistor structures is oriented in a first lateral direction; and
the first and second constituent transistors are laterally contiguous with one another in a second lateral direction orthogonal to the first lateral direction.
12. A device comprising:
a semiconductor substrate;
a first constituent transistor comprising a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another; and
a second constituent transistor laterally contiguous with the first constituent transistor, comprising a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another;
wherein each transistor structure of the first and second plurality of transistor structures comprises:
a body region disposed in the semiconductor substrate and having a first conductivity type;
source and drain regions disposed in the semiconductor substrate and having a second conductivity type, the source region being disposed within the body region; and
a gate supported by the semiconductor substrate and to which a bias voltage is applied during operation to form a channel in the body region to support current flow between the source and drain regions;
wherein each transistor structure of the first plurality of transistor structures further comprises a halo region disposed in the semiconductor substrate, having the first conductivity type, and extending into the channel from the source region such that the first constituent transistor has a higher threshold voltage than the second constituent transistor; and
wherein the first and second constituent transistors are arranged as inner and outer devices, respectively.
13. The device of claim 12 , wherein each transistor structure of the second plurality of transistor structures lacks a halo region.
14. The device of claim 12 , wherein the first plurality of transistor structures are laterally surrounded by the second plurality of transistor structures.
15. The device of claim 12 , wherein the first and second pluralities of transistor structures are not electrically isolated from one another.
16. The device of claim 12 , wherein:
each body region comprises a plurality of body contact regions; and
the source region comprises a plurality of constituent source regions disposed in a laterally alternating arrangement with the plurality of body contact regions.
17. The device of claim 16 , wherein:
the halo region has a lateral boundary that defines adjacent transistor structures of the first constituent transistor and the second constituent transistor; and
the lateral boundary is disposed in one of the plurality of body contact regions.
18. A method of fabricating a device in a semiconductor substrate, the method comprising:
forming body regions in the semiconductor substrate of first and second pluralities of transistor structures of first and second constituent transistors, respectively, the first and second constituent transistors being adjacent to one another, the body regions having a first conductivity type;
forming gates of the first and second pluralities of transistor structures over the semiconductor substrate;
forming source and drain regions in the semiconductor substrate of the first and second pluralities of transistor structures, the source and drain regions having a second conductivity type; and
implanting dopant of the first conductivity type in the semiconductor substrate in the body regions under the gates in the first plurality of transistor structures such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor;
wherein the first and second constituent transistors are arranged as inner and outer devices, respectively.
19. The method of claim 18 , further comprising implanting dopant of the second conductivity type to form source extension regions of the second plurality of transistor structures.
20. A method of fabricating a device in a semiconductor substrate, the method comprising:
forming body regions in the semiconductor substrate of first and second pluralities of transistor structures of first and second constituent transistors, respectively the first and second constituent transistors being adjacent to one another, the body regions having a first conductivity type;
forming gates of the first and second pluralities of transistor structures over the semiconductor substrate;
forming source and drain regions in the semiconductor substrate of the first and second pluralities of transistor structures, the source and drain regions having a second conductivity type; and
implanting dopant of the first conductivity type in the semiconductor substrate in the body regions under the gates in the first plurality of transistor structures such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor;
wherein implanting the dopant of the first conductivity type comprises performing a halo implant configured to form a halo region of a logic transistor in the semiconductor substrate.